Formation, Nature, And Stability Of The Arsenic-Silicon-Oxygen Alloy For Plasma Doping Of Non-Planar Silicon Structures

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dc.contributor.utaustinauthorKweon, Kyoung E.en
dc.contributor.utaustinauthorHwang, Gyeong S.en
dc.creatorVentzek, Peter L. G.en
dc.creatorKweon, Kyoung E.en
dc.creatorUeda, Hirokazuen
dc.creatorOka, Masahiroen
dc.creatorSugimoto, Yasuhiroen
dc.creatorHwang, Gyeong S.en
dc.date.accessioned2015-09-09T15:50:08Zen
dc.date.available2015-09-09T15:50:08Zen
dc.date.issued2014-12en
dc.description.abstractWe demonstrate stable arsenic-silicon-oxide film formation during plasma doping of arsenic into non-planar silicon surfaces through investigation of the nature and stability of the ternary oxide using first principles calculations with experimental validations. It is found that arsenic can be co-mingled with silicon and oxygen, while the ternary oxide exhibits the minimum energy phase at x approximate to 0.3 in AsxSi1-xO2-0.5x. Our calculations also predict that the arsenic-silicon-oxide alloy may undergo separation into As-O, Si-rich As-Si-O, and Si-O phases depending on the composition ratio, consistent with experimental observations. This work highlights the importance of the solid-state chemistry for controlled plasma doping. (C) 2014 AIP Publishing LLC.en
dc.description.departmentChemical Engineeringen
dc.description.sponsorshipWelch Foundation F-1535en
dc.identifier.citationVentzek, Peter L. G., Kweon, Kyoung E., Ueda, Hirokazu, Oka, Masahiro, Sugimoto, Yasuhiro, Hwang, Gyeong S., >Formation, nature, and stability of the arsenic-silicon-oxygen alloy for plasma doping of non-planar silicon structures,> Appl. Phys. Lett. 105, 262102 (2014). doi: 10.1063/1.4905206.en
dc.identifier.doi10.1063/1.4905206en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/2152/31056en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/105/26/10.1063/1.4905206en
dc.language.isoEnglishen
dc.relation.ispartofserialApplied Physics Lettersen
dc.rightsAdministrative deposit of works to Texas ScholarWorks: This works author(s) is or was a University faculty member, student or staff member; this article is already available through open access or the publisher allows a PDF version of the article to be freely posted online. The library makes the deposit as a matter of fair use (for scholarly, educational, and research purposes), and to preserve the work and further secure public access to the works of the University.en
dc.rightsCopyright American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en
dc.rights.holderAIPen
dc.subjectdefectsen
dc.subjectsien
dc.subjectphysics, applieden
dc.titleFormation, Nature, And Stability Of The Arsenic-Silicon-Oxygen Alloy For Plasma Doping Of Non-Planar Silicon Structuresen
dc.typeArticleen

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