Surface Wave Accelerator Based On Silicon Carbide: Theoretical Study

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dc.contributor.utaustinauthorKalmykov S.en
dc.contributor.utaustinauthorKorobkin, D.en
dc.contributor.utaustinauthorNeuner, B.en
dc.contributor.utaustinauthorShvets, G.en
dc.creatorKalmykov, S.en
dc.creatorKorobkin, D.en
dc.creatorNeuner, B.en
dc.creatorShvets, G.en
dc.date.accessioned2015-04-16T14:47:34Zen
dc.date.available2015-04-16T14:47:34Zen
dc.date.issued2009en
dc.description.abstractCompact near-field solid-state accelerating structure powered by a carbon dioxide (CO(2)) laser is considered. The accelerating luminous transverse magnetic mode is excited in a few-micron wide evacuated planar channel between two silicon carbide (SiC) films grown on silicon (Si) wafers. Laser coupling to this mode is accomplished through the properly designed Si gratings. Operating wavelength is dictated by the frequency-dependent dielectric permittivity of SiC and the channel width. The geometric loss factor kappa of the accelerating mode is computed. It is found that the unwanted excitation of the guided modes in Si wafers reduces the laser coupling efficiency and increases the fields inside the Si wafer.en
dc.description.departmentPhysicsen
dc.identifier.citationS. Kalmykov, D. Korobkin, B. Neuner, and G. Shvets. AIP Conference Proceedings 1086, 538 (2009); doi: 10.1063/1.3080964en
dc.identifier.doi10.1063/1.3080964en
dc.identifier.issn0094-243Xen
dc.identifier.issn978-0-7354-0617-9en
dc.identifier.urihttp://hdl.handle.net/2152/29408en
dc.language.isoEnglishen
dc.relation.ispartofserialAdvanced Accelerator Conceptsen_US
dc.rightsAdministrative deposit of works to UT Digital Repository: This works author(s) is or was a University faculty member, student or staff member; this article is already available through open access or the publisher allows a PDF version of the article to be freely posted online. The library makes the deposit as a matter of fair use (for scholarly, educational, and research purposes), and to preserve the work and further secure public access to the works of the University.en
dc.subjectsilicon carbideen
dc.subjectplanar accelerating structureen
dc.subjectphysics, applieden
dc.subjectphysics, particles & fieldsen
dc.titleSurface Wave Accelerator Based On Silicon Carbide: Theoretical Studyen
dc.typeArticleen

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