Mechanistic Study Of Plasma Damage Of Low k Dielectric Surfaces

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dc.contributor.utaustinauthorBao, J. J.en
dc.contributor.utaustinauthorShi, H. L.en
dc.creatorBao, J. J.en
dc.creatorShi, H. L.en
dc.creatorLiu, J. J.en
dc.creatorHuang, H.en
dc.creatorHo, P. S.en
dc.creatorGoodner, M. D.en
dc.creatorMoinpour, M.en
dc.creatorKloster, G. M.en
dc.date.accessioned2015-04-16T14:47:25Zen
dc.date.available2015-04-16T14:47:25Zen
dc.date.issued2007-10en
dc.description.abstractPlasma damage to low k dielectric materials was investigated from a mechanistic point of view. Low k dielectric films were treated by plasma Ar, O-2, N-2/H-2, N-2 and H-2 in a standard RIE chamber and the damage was characterized by Angle Resolved X-ray Photoelectron Spectroscopy (ARXPS), X-Ray Reflectivity (XRR), Fourier Transform Infrared Spectroscopy (FTIR) and Contact Angle measurements. Both carbon depletion and surface densification were observed on the top surface of damaged low k materials while the bulk remained largely unaffected. Plasma damage was found to be a complicated phenomenon involving both chemical and physical effects, depending on chemical reactivity and the energy and mass of the plasma species. A downstream hybrid plasma source with separate ions and atomic radicals was employed to study their respective roles in the plasma damage process. Ions were found to play a more important role in the plasma damage process. The dielectric constant of low k materials can increase up to 20% due to plasma damage and we attributed this to the removal of the methyl group making the low k surface hydrophilic. Annealing was generally effective in mitigating moisture uptake to restore the k value but the recovery was less complete for higher energy plasmas. Quantum chemistry calculation confirmed that physisorbed water in low k materials induces the largest increase of dipole moments in comparison with changes of surface bonding configurations, and is primarily responsible for the dielectric constant increase.en
dc.description.departmentMicroelectronics Research Centeren
dc.identifier.citationJunjing Bao, Hualiang Shi, Junjun Liu, Huai Huang, P. S. Ho, M. D. Goodner, M. Moinpour, and G. M. Kloster. AIP Conference Proceedings 945, 125 (Oct., 2007); doi: 10.1063/1.2815773en
dc.identifier.doi10.1063/1.2815773en
dc.identifier.issn0094-243Xen
dc.identifier.issn978-0-7354-0459-5en
dc.identifier.urihttp://hdl.handle.net/2152/29395en
dc.language.isoEnglishen
dc.relation.ispartofserialStress-Induced Phenomena in Metallizationen_US
dc.rightsAdministrative deposit of works to UT Digital Repository: This works author(s) is or was a University faculty member, student or staff member; this article is already available through open access or the publisher allows a PDF version of the article to be freely posted online. The library makes the deposit as a matter of fair use (for scholarly, educational, and research purposes), and to preserve the work and further secure public access to the works of the University.en
dc.subjectlow ken
dc.subjectsurfaceen
dc.subjectchemical and physical effectsen
dc.subjecthybrid sourceen
dc.subjectplasmaen
dc.subjectdamageen
dc.subjectmechanismen
dc.subjecthydrophobicen
dc.subjectrecoveryen
dc.subjectconstant materialsen
dc.subjectfilmsen
dc.subjectsilsesquioxaneen
dc.subjectmaterials science, multidisciplinaryen
dc.subjectphysics, applieden
dc.titleMechanistic Study Of Plasma Damage Of Low k Dielectric Surfacesen
dc.typeArticleen

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