SiOx-based resistive switching memory integrated in nanopillar structure fabricated by nanosphere lithography

dc.contributor.advisorYu, Edward T.
dc.contributor.advisorEkerdt, John G.
dc.creatorJi, Li, active 21st centuryen
dc.date.accessioned2014-09-30T20:13:52Zen
dc.date.issued2014-08en
dc.date.submittedAugust 2014en
dc.date.updated2014-09-30T20:13:52Zen
dc.descriptiontexten
dc.description.abstractA highly compact, one diode-one resistor (1D-1R) SiOx-based resistive switching memory device with nano-pillar architecture has been achieved for the first time using nano-sphere lithography. The average nano-pillar height and diameter are 1.3 μm and 130 nm, respectively. Low-voltage electroforming using DC bias and AC pulse response in the 50ns regime demonstrate good potential for high-speed, low-energy nonvolatile memory. Nano-sphere deposition, oxygen-plasma isolation, and nano-pillar formation by deep-Si-etching are studied and optimized for the 1D-1R configurations. Excellent electrical performance, data retention and the potential for wafer-scale integration are promising for future non-volatile memory applications.en
dc.description.departmentMaterials Science and Engineeringen
dc.format.mimetypeapplication/pdfen
dc.identifier.urihttp://hdl.handle.net/2152/26200en
dc.language.isoenen
dc.subjectRRAMen
dc.titleSiOx-based resistive switching memory integrated in nanopillar structure fabricated by nanosphere lithographyen
dc.typeThesisen
thesis.degree.departmentMaterials Science and Engineeringen
thesis.degree.disciplineMaterials Science and Engineeringen
thesis.degree.grantorThe University of Texas at Austinen
thesis.degree.levelMastersen
thesis.degree.nameMaster of Science in Engineeringen
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