SiOx-based resistive switching memory integrated in nanopillar structure fabricated by nanosphere lithography
| dc.contributor.advisor | Yu, Edward T. | |
| dc.contributor.advisor | Ekerdt, John G. | |
| dc.creator | Ji, Li, active 21st century | en |
| dc.date.accessioned | 2014-09-30T20:13:52Z | en |
| dc.date.issued | 2014-08 | en |
| dc.date.submitted | August 2014 | en |
| dc.date.updated | 2014-09-30T20:13:52Z | en |
| dc.description | text | en |
| dc.description.abstract | A highly compact, one diode-one resistor (1D-1R) SiOx-based resistive switching memory device with nano-pillar architecture has been achieved for the first time using nano-sphere lithography. The average nano-pillar height and diameter are 1.3 μm and 130 nm, respectively. Low-voltage electroforming using DC bias and AC pulse response in the 50ns regime demonstrate good potential for high-speed, low-energy nonvolatile memory. Nano-sphere deposition, oxygen-plasma isolation, and nano-pillar formation by deep-Si-etching are studied and optimized for the 1D-1R configurations. Excellent electrical performance, data retention and the potential for wafer-scale integration are promising for future non-volatile memory applications. | en |
| dc.description.department | Materials Science and Engineering | en |
| dc.format.mimetype | application/pdf | en |
| dc.identifier.uri | http://hdl.handle.net/2152/26200 | en |
| dc.language.iso | en | en |
| dc.subject | RRAM | en |
| dc.title | SiOx-based resistive switching memory integrated in nanopillar structure fabricated by nanosphere lithography | en |
| dc.type | Thesis | en |
| thesis.degree.department | Materials Science and Engineering | en |
| thesis.degree.discipline | Materials Science and Engineering | en |
| thesis.degree.grantor | The University of Texas at Austin | en |
| thesis.degree.level | Masters | en |
| thesis.degree.name | Master of Science in Engineering | en |