From Coherent States In Adjacent Graphene Layers Toward Low-Power Logic Circuits
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Date
2011-08
Authors
Register, L. F.
Basu, D.
Reddy, D.
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Abstract
Colleagues and we recently proposed a new type of transistor, a Bilayer PseudoSpin Field Effect Transistor (BiSFET), based on many-body coherent states in coupled electron and hole layers in graphene. Here we review the basic BiSFET device concept and ongoing efforts to determine how such a device, which would be far from a drop-in replacement for MOSFETs in CMOS logic, could be used for low-power logic operation, and to model the effects of engineerable device parameters on the formation and gating of interlayer coherent state.
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Leonard F. Register, Dipanjan Basu, and Dharmendar Reddy. Advances in Condensed Matter Physics. Vol. 2011, Article ID 258731, 8 pages. doi:10.1155/2011/258731