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Item Characterization Of Thermal Stresses And Plasticity In Through-Silicon Via Structures For Three-Dimensional Integration(2014) Jiang, T. F.; Ryu, S. K.; Im, J.; Huang, R.; Ho, P. S.; Jiang, Tengfei; Ryu, Suk-Kyu; Im, Jay; Huang, Rui; Ho, Paul S.Through-silicon via (TSV) is a critical element connecting stacked dies in three-dimensional (3D) integration. The mismatch of thermal expansion coefficients between the Cu via and Si can generate significant stresses in the TSV structure to cause reliability problems. In this study, the thermal stress in the TSV structure was measured by the wafer curvature method and its unique stress characteristics were compared to that of a Cu thin film structure. The thermo-mechanical characteristics of the Cu TSV structure were correlated to microstructure evolution during thermal cycling and the local plasticity in Cu in a triaxial stress state. These findings were confirmed by microstructure analysis of the Cu vias and finite element analysis (FEA) of the stress characteristics. In addition, the local plasticity and deformation in and around individual TSVs were measured by synchrotron x-ray microdiffraction to supplement the wafer curvature measurements. The importance and implication of the local plasticity and residual stress on TSV reliabilities are discussed for TSV extrusion and device keep-out zone (KOZ).Item Formation, Nature, And Stability Of The Arsenic-Silicon-Oxygen Alloy For Plasma Doping Of Non-Planar Silicon Structures(2014-12) Ventzek, Peter L. G.; Kweon, Kyoung E.; Ueda, Hirokazu; Oka, Masahiro; Sugimoto, Yasuhiro; Hwang, Gyeong S.; Kweon, Kyoung E.; Hwang, Gyeong S.We demonstrate stable arsenic-silicon-oxide film formation during plasma doping of arsenic into non-planar silicon surfaces through investigation of the nature and stability of the ternary oxide using first principles calculations with experimental validations. It is found that arsenic can be co-mingled with silicon and oxygen, while the ternary oxide exhibits the minimum energy phase at x approximate to 0.3 in AsxSi1-xO2-0.5x. Our calculations also predict that the arsenic-silicon-oxide alloy may undergo separation into As-O, Si-rich As-Si-O, and Si-O phases depending on the composition ratio, consistent with experimental observations. This work highlights the importance of the solid-state chemistry for controlled plasma doping. (C) 2014 AIP Publishing LLC.