Browsing by Subject "plasmonic"

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    All-epitaxial, laterally structured plasmonic materials
    (AIP Publishing, 2022-04-06) Skipper, Alec M.; Petluru, Priyanka; Ironside, Daniel J.; Garcia, Ashlee M.; Muhowski, Aaron J.; Wasserman, Daniel; Bank, Seth R.
    Optoelectronic devices in the mid-infrared have attracted significant interest due to numerous potential applications in communications and sensing. Molecular beam epitaxial (MBE) growth of highly doped InAs has emerged as a promising “designer metal” platform for the plas- monic enhancement of mid-infrared devices. However, while typical plasmonic materials can be patterned to engineer strong localized reso- nances, the lack of lateral control in conventional MBE growth makes it challenging to create similar structures compatible with monolithically grown plasmonic InAs. To this end, we report the growth of highly doped InAs plasmonic ridges for the localized resonant enhancement of mid-IR emitters and absorbers. Furthermore, we demonstrate a method for regaining a planar surface above plasmonic cor- rugations, creating a pathway to epitaxially integrate these structures into active devices that leverage conventional growth and fabrication techniques.
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    Ultra-thin plasmonic detectors
    (Optica Publishing, 2021-12-08) Nordin, Leland; Petluru, Priyanka; Kamboj, Abhilasha; Muhowski, Aaron J.; Wasserman, Daniel
    Plasmonic materials, and their ability to enable strong concentration of optical fields, have offered a tantalizing foun- dation for the demonstration of sub-diffraction-limit photonic devices. However, practical and scalable plasmonic optoelectronics for real world applications remain elusive. In this work, we present an infrared photodetector leverag- ing a device architecture consisting of a “designer” epitaxial plasmonic metal integrated with a quantum-engineered detector structure, all in a mature III-V semiconductor material system. Incident light is coupled into surface plasmon- polariton modes at the detector/designer metal interface, and the strong confinement of these modes allows for a sub-diffractive (∼λ0/33) detector absorber layer thickness, effectively decoupling the detector’s absorption efficiency and dark current. We demonstrate high-performance detectors operating at non-cryogenic temperatures (T= 195 K), without sacrificing external quantum efficiency, and superior to well-established and commercially available detectors. This work provides a practical and scalable plasmonic optoelectronic device architecture with real world mid-infrared applications.