WSe₂-based devices and oxide structures

dc.contributor.advisorAkinwande, Dejien
dc.contributor.advisorRuoff, Rodney S.en
dc.creatorTan, Chengen
dc.date.accessioned2015-10-26T19:16:57Zen
dc.date.available2015-10-26T19:16:57Zen
dc.date.issued2014-05en
dc.date.submittedMay 2014en
dc.date.updated2015-10-26T19:16:57Zen
dc.descriptiontexten
dc.description.abstractIn this work the transition metal dichalcogenide WSe₂ is exfoliated and characterized. It is shown from the electrical measurements that the material can display both p-type conduction as well as ambipolar characteristics. WSe₂ flakes were also oxidized through thermal and laser treatments to produce oxide structures. The structures and oxidation processes are characterized and described in this thesis.en
dc.description.departmentMechanical Engineeringen
dc.format.mimetypeapplication/pdfen
dc.identifierdoi:10.15781/T2031Gen
dc.identifier.urihttp://hdl.handle.net/2152/31964en
dc.language.isoenen
dc.subjectWSe₂en
dc.subjectTransition metal dichalcogenideen
dc.subjectTwo dimensional materialsen
dc.subjectTungsten oxideen
dc.titleWSe₂-based devices and oxide structuresen
dc.typeThesisen
thesis.degree.departmentMechanical Engineeringen
thesis.degree.disciplineMaterials Science and Engineeringen
thesis.degree.grantorThe University of Texas at Austinen
thesis.degree.levelMastersen
thesis.degree.nameMaster of Science in Engineeringen

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