Staircase avalanche photodiode with a staircase multiplication region composed of an AIInAsSb alloy

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dc.contributor.assigneeBoard of Regents, The University of Texas System
dc.contributor.assigneeUniversity of Virginia Patent Foundation
dc.creatorJoe C. Campbell
dc.creatorSeth Bank
dc.creatorScott Maddox
dc.creatorWenlu Sun
dc.date.accessioned2019-10-23T19:28:55Z
dc.date.available2019-10-23T19:28:55Z
dc.date.filed2016-06-17
dc.date.issued2017-08-29
dc.description.abstractA staircase avalanche photodiode with a staircase multiplication region composed of an AlInAsSb alloy. The photodiode includes a buffer layer adjacent to a substrate and an avalanche multiplication region adjacent to the buffer layer, where the avalanche multiplication region includes a graded AlInAsSb alloy grown lattice-matched or psuedomorphically strained on either InAs or GaSb. The photodiode further includes a photoabsorption layer adjacent to the avalanche multiplication region, where the photoabsorption layer is utilized for absorbing photons. By utilizing AlInAsSb in the multiplication region, the photodiode exhibits a direct bandgap over a wide range of compositions as well as exhibits large conduction band offsets much larger than the smallest achievable bandgap and small valance band offsets. Furthermore, the photodiode is able to detect extremely weak light with a high signal-to-noise ratio.
dc.description.departmentBoard of Regents, University of Texas System
dc.identifier.applicationnumber15185914
dc.identifier.patentnumber9748430
dc.identifier.urihttps://hdl.handle.net/2152/76934
dc.identifier.urihttp://dx.doi.org/10.26153/tsw/4023
dc.publisherUnited States Patent and Trademark Office
dc.relation.ispartofUniversity of Texas Patents
dc.relation.ispartofUniversity of Texas Patents
dc.rights.restrictionOpen
dc.rights.restrictionOpen
dc.subject.cpcH01L31/1075
dc.subject.cpcH01L31/03046
dc.subject.cpcY02E10/544
dc.subject.uspcNo longer published
dc.titleStaircase avalanche photodiode with a staircase multiplication region composed of an AIInAsSb alloy
dc.typePatent

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