High mobility heterojunction transistor and method

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dc.contributor.assigneeBoard of Regents, The University of Texas System
dc.creatorAl F. Tasch, Jr.
dc.creatorSanjay K. Banerjee
dc.creatorQiqing C. Ouyang
dc.date.accessioned2019-10-23T21:40:49Z
dc.date.available2019-10-23T21:40:49Z
dc.date.filed2000-05-09
dc.date.issued2001-11-20
dc.description.abstractA heterojunction transistor with high mobility carriers in the channel region includes a source region and a drain region formed in a semiconductor body with the source region and the drain region comprising doped semiconductor alloys separated from the substrate by heterojunctions. A channel region is provided between the source region and the drain region comprising an undoped layer of an alloy of the semiconductor material and a deposited layer of material of the semiconductor body overlying the undoped layer. A gate electrode is formed on a gate oxide over the channel region. In fabricating the high mobility heterojunction transistor, the spaced source and drain regions are formed in the substrate by implanting dopant of conductivity type opposite to the substrate and a material in the alloy and then annealing the structure to form the alloy of the semiconductor material under the undoped layer.
dc.description.departmentBoard of Regents, University of Texas System
dc.identifier.applicationnumber9568091
dc.identifier.patentnumber6319799
dc.identifier.urihttps://hdl.handle.net/2152/77263
dc.identifier.urihttp://dx.doi.org/10.26153/tsw/4352
dc.publisherUnited States Patent and Trademark Office
dc.relation.ispartofUniversity of Texas Patents
dc.relation.ispartofUniversity of Texas Patents
dc.rights.restrictionOpen
dc.rights.restrictionOpen
dc.subject.cpcH01L29/1054
dc.subject.cpcH01L29/7782
dc.subject.uspc257/192
dc.subject.uspc257/E29.056
dc.subject.uspc257/E29.248
dc.subject.uspc438/528
dc.subject.uspc438/285
dc.subject.uspc438/306
dc.titleHigh mobility heterojunction transistor and method
dc.typePatent

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