Growth of polycrystalline CaF.sub.2 via low temperature OMCVD

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dc.contributor.assigneeBoard of Regents, The University of Texas System
dc.creatorAl F. Tasch, Jr.
dc.creatorRichard A. Jones
dc.creatorAlan H. Cowley
dc.date.accessioned2019-10-23T21:44:55Z
dc.date.available2019-10-23T21:44:55Z
dc.date.filed1989-07-11
dc.date.issued1991-06-25
dc.description.abstractThe present invention involves the use of organocalcium precursors for the chemical vapor deposition of thin CaF.sub.2 films under exceptionally mild conditions. This method is based on utilizing an organocalcium compound and a source of fluorine in a chemical vapor deposition reaction to form CaF.sub.2.
dc.description.departmentBoard of Regents, University of Texas System
dc.identifier.applicationnumber7379016
dc.identifier.patentnumber5026575
dc.identifier.urihttps://hdl.handle.net/2152/77358
dc.identifier.urihttp://dx.doi.org/10.26153/tsw/4447
dc.publisherUnited States Patent and Trademark Office
dc.relation.ispartofUniversity of Texas Patents
dc.relation.ispartofUniversity of Texas Patents
dc.rights.restrictionOpen
dc.rights.restrictionOpen
dc.subject.cpcC23C16/30
dc.subject.uspc427/255.11
dc.subject.uspc427/255.39
dc.titleGrowth of polycrystalline CaF.sub.2 via low temperature OMCVD
dc.typePatent

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