Structure for and method of using a four terminal hybrid silicon/organic field effect sensor device

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dc.contributor.assigneeBoard of Regents, The University of Texas System
dc.creatorAnanth Dodabalapur
dc.creatorDeepak Kumar Sharma
dc.creatorDaniel Fine
dc.date.accessioned2019-10-23T19:26:52Z
dc.date.available2019-10-23T19:26:52Z
dc.date.filed2005-12-01
dc.date.issued2008-07-08
dc.description.abstractA four terminal field effect device comprises a silicon field effect device with a silicon N-type semiconductor channel and an N+ source and drain region. An insulator is deposited over the N-type semiconductor channel. An organic semiconductor material is deposited over the insulator gate forming a organic semiconductor channel and is exposed to the ambient environment. Drain and source electrodes are deposited and electrically couple to respective ends of the organic semiconductor channel. The two independent source electrodes and the two independent drain electrodes form the four terminals of the new field effect device. The organic semiconductor channel may be charged and discharged electrically and have its charge modified in response to chemicals in the ambient environment. The conductivity of silicon semiconductor channel is modulated by induced charges in the common gate in response to charges in the organic semiconductor channel.
dc.description.departmentBoard of Regents, University of Texas System
dc.identifier.applicationnumber11291729
dc.identifier.patentnumber7397072
dc.identifier.urihttps://hdl.handle.net/2152/76883
dc.identifier.urihttp://dx.doi.org/10.26153/tsw/3972
dc.publisherUnited States Patent and Trademark Office
dc.relation.ispartofUniversity of Texas Patents
dc.relation.ispartofUniversity of Texas Patents
dc.rights.restrictionOpen
dc.rights.restrictionOpen
dc.subject.cpcB82Y10/00
dc.subject.cpcB82Y15/00
dc.subject.cpcB82Y30/00
dc.subject.cpcG01N27/4141
dc.subject.cpcH01L27/286
dc.subject.cpcH01L2924/0002
dc.subject.cpcH01L2924/00
dc.subject.uspc257/226
dc.subject.uspc257/253
dc.subject.uspc257/428
dc.subject.uspc257/E27.117
dc.subject.uspc257/E51.012
dc.titleStructure for and method of using a four terminal hybrid silicon/organic field effect sensor device
dc.typePatent

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