Evaluating piezoelectric constant d₃₁ of films deposited on silicon using low frequency-actuated piezoelectric cantilever structures

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dc.contributor.advisorHall, Neal A.
dc.creatorCorona, Daniel William
dc.creator.orcid0000-0001-6160-4025
dc.date.accessioned2019-09-06T20:55:48Z
dc.date.available2019-09-06T20:55:48Z
dc.date.created2018-12
dc.date.issued2018-12-07
dc.date.submittedDecember 2018
dc.date.updated2019-09-06T20:55:48Z
dc.description.abstractPiezoelectric coefficients of films deposited on silicon are surprisingly expensive to measure using experiments commonly found in literature. A low-cost method of approximating the small-signal piezoelectric coefficient d₃₁ for a film by comparing data from a single laser-doppler vibrometer measurement and a numerical model is presented. This method is useful for directly evaluating the quality of a piezoelectric film. Relevant properties of piezoelectric materials are introduced, and pitfalls of prior testing methods are discussed. An analytical model of the test is developed to provide insight into critical test parameters. The test is validated by comparing the numerical and the analytical model, by comparing experimental results to film x-ray diffractometry measurements, and by building opportunities for validation into the experiment. Explicit experimental validation is deemed too expensive and unnecessary for the immediate needs of the author. The method is also applied to evaluate the piezoelectric properties of several AlN films developed using varying fabrication parameters. Results are used to improve the fabrication process of an AlN film on silicon for use in piezoelectric sensor prototypes
dc.description.departmentMechanical Engineering
dc.format.mimetypeapplication/pdf
dc.identifier.urihttps://hdl.handle.net/2152/75746
dc.identifier.urihttp://dx.doi.org/10.26153/tsw/2848
dc.language.isoen
dc.subjectPiezoelectric
dc.subjectAlN
dc.subjectAluminum nitride
dc.subjectPZT
dc.subjectFilm
dc.subjectCantilever
dc.subjectTest
dc.subjectMaterial
dc.subjectProperties
dc.subjectPiezo
dc.titleEvaluating piezoelectric constant d₃₁ of films deposited on silicon using low frequency-actuated piezoelectric cantilever structures
dc.typeThesis
dc.type.materialtext
thesis.degree.departmentMechanical Engineering
thesis.degree.disciplineMechanical Engineering
thesis.degree.grantorThe University of Texas at Austin
thesis.degree.levelMasters
thesis.degree.nameMaster of Science in Engineering

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