Synthesizing graphene from metal-carbon solutions using ion implantation

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dc.contributor.assigneeTexas Instruments Incorporated
dc.contributor.assigneeBoard of Regents, The University of Texas System
dc.creatorLuigi Colombo
dc.creatorRobert M. Wallace
dc.creatorRodney S. Ruoff
dc.date.accessioned2019-10-23T14:01:51Z
dc.date.available2019-10-23T14:01:51Z
dc.date.filed2010-02-16
dc.date.issued2012-11-13
dc.description.abstractA method and semiconductor device for synthesizing graphene using ion implantation of carbon. Carbon is implanted in a metal using ion implantation. After the carbon is distributed in the metal, the metal is annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the surface of the metal. The metal/graphene surface is then transferred to a dielectric layer in such a manner that the graphene layer is placed on top of the dielectric layer. The metal layer is then removed. Alternatively, recessed regions are patterned and etched in a dielectric layer located on a substrate. Metal is later formed in these recessed regions. Carbon is then implanted into the metal using ion implantation. The metal may then be annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the metal's surface.
dc.description.departmentBoard of Regents, University of Texas System
dc.identifier.applicationnumber12706116
dc.identifier.patentnumber8309438
dc.identifier.urihttps://hdl.handle.net/2152/76363
dc.identifier.urihttp://dx.doi.org/10.26153/tsw/3452
dc.publisherUnited States Patent and Trademark Office
dc.relation.ispartofUniversity of Texas Patents
dc.relation.ispartofUniversity of Texas Patents
dc.rights.restrictionOpen
dc.rights.restrictionOpen
dc.subject.cpcH01L21/02612
dc.subject.cpcH01L21/02527
dc.subject.uspc257/4
dc.subject.uspc257/9
dc.subject.uspc257/24
dc.subject.uspc257/29
dc.subject.uspc257/76
dc.subject.uspc257/E21.211
dc.subject.uspc438/478
dc.subject.uspc438/82
dc.subject.uspc438/105
dc.subject.uspc438/212
dc.subject.uspc438/739
dc.subject.uspc438/778
dc.titleSynthesizing graphene from metal-carbon solutions using ion implantation
dc.typePatent

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