Use of step and flash imprint lithography for direct imprinting of dielectric materials for dual damascene processing

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dc.contributor.assigneeBoard of Regents, The University of Texas System
dc.creatorWillson, C. Grant
dc.creatorNishimura, Yukio
dc.creatorJohnson, Stephen C.
dc.creatorPalmieri, Jr., Frank Anthony
dc.creatorStewart, Michael D.
dc.date.accessioned2019-10-23T19:31:01Z
dc.date.available2019-10-23T19:31:01Z
dc.date.filed2006-02-27
dc.date.issued2010-04-06
dc.description.abstractIn some embodiments, the present invention is directed to methods that involve the combination of step-and-flash imprint lithography (SFIL) with a multi-tier template to simultaneously pattern multiple levels of, for example, an integrated circuit device. In such embodiments, the imprinted material generally does not serve or act as a simple etch mask or photoresist, but rather serves as the insulation between levels and lines, i.e., as a functional dielectric material. After imprinting and a multiple step curing process, the imprinted pattern is filled with metal, as in dual damascene processing. Typically, the two printed levels will comprise a “via level,” which is used to make electrical contact with the previously patterned under-level, and a “wiring level.” The present invention provides for the direct patterning of functional materials, which represents a significant departure from the traditional approach to microelectronics manufacturing.
dc.description.departmentBoard of Regents, University of Texas System
dc.identifier.applicationnumber11363071
dc.identifier.patentnumber7691275
dc.identifier.urihttps://hdl.handle.net/2152/77016
dc.identifier.urihttp://dx.doi.org/10.26153/tsw/4105
dc.publisherUnited States Patent and Trademark Office
dc.relation.ispartofUniversity of Texas Patents
dc.relation.ispartofUniversity of Texas Patents
dc.rights.restrictionOpen
dc.rights.restrictionOpen
dc.subject.cpcB82Y10/00
dc.subject.cpcB82Y40/00
dc.subject.cpcG03F7/0002
dc.subject.cpcH01L21/76817
dc.subject.cpcH01L21/76807
dc.subject.cpcH01L21/76828
dc.subject.uspc216/13
dc.subject.uspc216/18
dc.subject.uspc216/41
dc.subject.uspc216/44
dc.subject.uspc216/52
dc.subject.uspc216/88
dc.subject.uspc438/638
dc.subject.uspc438/692
dc.subject.uspc438/700
dc.titleUse of step and flash imprint lithography for direct imprinting of dielectric materials for dual damascene processing
dc.typePatent

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