Tunnel field effect transistor (TFET) with lateral oxidation
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Date
2016-03-22
Authors
Lee, Jack C.
Zhao, Han
Journal Title
Journal ISSN
Volume Title
Publisher
United States Patent and Trademark Office
Abstract
A vertical-mode tunnel field-effect transistor (TFET) is provided with an oxide region that may be laterally positioned relative to a source region. The oxide region operates to reduce a tunneling effect in a tunnel region underlying a drain region, during an OFF-state of the TFET. The reduction in tunneling effect results in a reduction or elimination of a flow of OFF-state leakage current between the source region and the drain region. The TFET may have components made from group III-V compound materials.