Graphene synthesis by chemical vapor deposition
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Date
2013-06-25
Authors
Luigi Colombo
Rodney S. Ruoff
Xuesong Li
Journal Title
Journal ISSN
Volume Title
Publisher
United States Patent and Trademark Office
Abstract
Processes for synthesizing graphene films. Graphene films may be synthesized by heating a metal or a dielectric on a substrate to a temperature between 400° C. and 1,400° C. The metal or dielectric is exposed to an organic compound thereby growing graphene from the organic compound on the metal or dielectric. The metal or dielectric is later cooled to room temperature. As a result of the above process, standalone graphene films may be synthesized with properties equivalent to exfoliated graphene from natural graphite that is scalable to size far greater than that available on silicon carbide, single crystal silicon substrates or from natural graphite.