Browsing by Subject "transistors"
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Item Direct growth of MoS 2 on electrolytic substrate and realization of high-mobility transistors(2021-05-17) Alam, Md Hasibul; Chowdhury, Sayema; Roy, Anupam; Braga, Maria Helena; Banerjee, Sanjay K.; Akinwande, DejiAlthough electrostatic gating with liquid electrolytes has been thoroughly investigated to enhance electrical transport in two-dimensional (2D) materials, solid electrolyte alternatives are now actively being researched to overcome the limitations of liquid dielectrics. Here, we report direct growth of few-layer (3-4 L) molybdenum disulfide (MoS2), a prototypical 2D transition metal dichalcogenide (TMD), on lithium-ion solid electrolyte substrate by chemical vapor deposition (CVD), and demonstrate a transfer-free device fabrication method. The growth resulted in 5-10 µm sized triangular MoS2 single-crystals as confirmed by Raman spectroscopy, X-ray photoelectron spectroscopy, and scanning electron microscopy. Field-effect transistors (FETs) fabricated on the as-grown few-layer crystals show near-ideal gating performance with room temperature subthreshold swings around 65 mV/dec while maintaining an ON/OFF ratio around 10 5. Field-effect mobility in the range of 42-49 cm2V-1s-1 and current densities as high as 120 µA/µm with 0.5 µm channel length has been achieved, back-gated by the solid electrolyte. This is the highest reported mobility among comparable FETs on as-grown single/few-layer CVD MoS2. This growth and transfer-free device fabrication method on solid electrolyte substrates can be applied to other 2D TMDs for studying advanced thin-film transistors, interesting physics, and is amenable to diverse surface science experiments, otherwise difficult to realize with liquid electrolytes.Item Temperature Dependence Of Brillouin Light Scattering Spectra Of Acoustic Phonons In Silicon(2015-02) Olsson, Kevin S.; Klimovich, Nikita; An, Kyongmo; Sullivan, Sean; Weathers, Annie; Shi, Li; Li, Xiaoqin; Olsson, Kevin S.; Klimovich, Nikita; An, Kyongmo; Sullivan, Sean; Weathers, Annie; Shi, Li; Li, XiaoqinElectrons, optical phonons, and acoustic phonons are often driven out of local equilibrium in electronic devices or during laser-material interaction processes. The need for a better understanding of such non-equilibrium transport processes has motivated the development of Raman spectroscopy as a local temperature sensor of optical phonons and intermediate frequency acoustic phonons, whereas Brillouin light scattering (BLS) has recently been explored as a temperature sensor of low-frequency acoustic phonons. Here, we report the measured BLS spectra of silicon at different temperatures. The origins of the observed temperature dependence of the BLS peak position, linewidth, and intensity are examined in order to evaluate their potential use as temperature sensors for acoustic phonons. (C) 2015 AIP Publishing LLC.