Browsing by Subject "silicon carbide"
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Item Direct Selective Laser Sintering of Reaction Bonded Silicon Carbide(University of Texas at Austin, 2015) Meyers, Sebastian; Kruth, Jean-Pierre; Vleugels, JefThree-dimensional reaction bonded silicon carbide (SiSiC or RBSC) parts have been produced by direct selective laser sintering (SLS). Unlike previously investigated processing routes, which make use of a sacrificial polymer binder to form green parts, the parts in this work are built by scanning subsequent layers composed of a mixture of silicon and silicon carbide powders. A fibre laser is used to selectively melt the silicon under an inert argon atmosphere, resulting in porous preforms of sufficient strength for further handling and processing. After impregnation with a graphite suspension and infiltration with liquid Si at 1450°C, highly dense reaction bonded silicon carbide parts are obtained.Item Surface Wave Accelerator Based On Silicon Carbide: Theoretical Study(2009) Kalmykov, S.; Korobkin, D.; Neuner, B.; Shvets, G.; Kalmykov S.; Korobkin, D.; Neuner, B.; Shvets, G.Compact near-field solid-state accelerating structure powered by a carbon dioxide (CO(2)) laser is considered. The accelerating luminous transverse magnetic mode is excited in a few-micron wide evacuated planar channel between two silicon carbide (SiC) films grown on silicon (Si) wafers. Laser coupling to this mode is accomplished through the properly designed Si gratings. Operating wavelength is dictated by the frequency-dependent dielectric permittivity of SiC and the channel width. The geometric loss factor kappa of the accelerating mode is computed. It is found that the unwanted excitation of the guided modes in Si wafers reduces the laser coupling efficiency and increases the fields inside the Si wafer.