Browsing by Subject "resonant-tunneling transistors"
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Item From Coherent States In Adjacent Graphene Layers Toward Low-Power Logic Circuits(2011-08) Register, L. F.; Basu, D.; Reddy, D.; Register, Leonard F.; Basu, Dipanjan; Reddy, DharmendarColleagues and we recently proposed a new type of transistor, a Bilayer PseudoSpin Field Effect Transistor (BiSFET), based on many-body coherent states in coupled electron and hole layers in graphene. Here we review the basic BiSFET device concept and ongoing efforts to determine how such a device, which would be far from a drop-in replacement for MOSFETs in CMOS logic, could be used for low-power logic operation, and to model the effects of engineerable device parameters on the formation and gating of interlayer coherent state.