Browsing by Subject "mobility"
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Item Determinants Of Employment Externalization - A Study Of Temporary Workers And Independent Contractors(1993-06) Davisblake, A.; Uzzi, B.; Davis-Blake, AlisonThis paper examines what determines the use of temporary workers and independent contractors in a variety of organizations. We hypothesize that four factors affect the use of externalized workers: employment costs, the external environment, organizational size and bureaucratization, and skill requirements. Data from a large sample of employers surveyed by the U.S. Department of Labor were used to test the hypotheses. Analyses showed that each factor affected the use of both temporary workers and independent contractors; however, the effects differed across the two types of workers. Firm-specific training, government oversight, bureaucratized employment practices, establishment size, and requirements for high levels of informational or technical skill had negative effects on organizations' use of temporary workers; variation in employment needs positively affected the use of temporary workers. Variation in employment needs, bureaucratized employment practices, establishment size, and being part of a multiple-site firm had positive effects on the use of independent contractors. We discuss the implications of these findings for the study of the employment relationship.Item Family Mobility in Dallas, Texas, 1923-1938(University of Texas at Austin, 1942-03-01) Rosenquist, Carl M.; Browder, Walter GordonItem Family Mobility in Houston, Texas, 1922-1938(University of Texas at Austin, 1942-06-22) Rosenquist, Carl M.; Browder, Walter GordonItem Letter to John David Taylor from H.B. Stenzel on 1970-04-21(1970-04-21) Stenzel, Henryk B.Item Mobility across Borders and Continuums of Violence: Experiences of Bangladeshi Women in Correctional Homes in Kolkata(The Bernard and Audre Rapoport Center for Human Rights and Justice, 2017) Mehta, RimpleThe trajectory of violence in the lives of women engaging in transborder mobility can be plotted along a continuum where the border becomes one moment and site of violence in a series of violent experiences. Being masculinised and militarised the border becomes the breeding ground for gender–based violence. In this context, the paper discusses the experiences of violence in the lives of Bangladeshi women in Correctional Homes in Kolkata. Their narratives suggest that perpetrators and sites of violence change but the Indo-Bangladesh border remains central to their experiences of violence. This paper focuses on the violence experienced by these women before crossing the border, while crossing the border to come to India, during their stay in India and while returning to Bangladesh; coupled with emotions of fear, anxiety and shame. Their experiences of violence need to be seen in the context of their non-normative ways of being – their challenge to the norms instituted for women by the family, state and society. Their so–called deviations from normative modes of behaviour put them in situations of extreme vulnerability.Item Rapid Targeted Gene Disruption in Bacillus Anthracis(2013-09) Saldanha, Roland J.; Pemberton, Adin; Shiflett, Patrick; Perutka, Jiri; Whitt, Jacob T.; Ellington, Andrew; Lambowitz, Alan M.; Kramer, Ryan; Taylor, Deborah; Lamkin, Thomas J.; Perutka, Jiri; Whitt, Jacob T.; Ellington, Andrew; Lambowitz, Alan M.Anthrax is a zoonotic disease recognized to affect herbivores since Biblical times and has the widest range of susceptible host species of any known pathogen. The ease with which the bacterium can be weaponized and its recent deliberate use as an agent of terror, have highlighted the importance of gaining a deeper understanding and effective countermeasures for this important pathogen. High quality sequence data has opened the possibility of systematic dissection of how genes distributed on both the bacterial chromosome and associated plasmids have made it such a successful pathogen. However, low transformation efficiency and relatively few genetic tools for chromosomal manipulation have hampered full interrogation of its genome. Results: Group II introns have been developed into an efficient tool for site-specific gene inactivation in several organisms. We have adapted group II intron targeting technology for application in Bacillus anthracis and generated vectors that permit gene inactivation through group II intron insertion. The vectors developed permit screening for the desired insertion through PCR or direct selection of intron insertions using a selection scheme that activates a kanamycin resistance marker upon successful intron insertion. Conclusions: The design and vector construction described here provides a useful tool for high throughput experimental interrogation of the Bacillus anthracis genome and will benefit efforts to develop improved vaccines and therapeutics.Item Top-Gated Chemical Vapor Deposited Mos2 Field-Effect Transistors On Si3N4 Substrates(2015-02) Sanne, A.; Ghosh, R.; Rai, A.; Movva, Hema Chandra Prakash; Sharma, A.; Rao, R.; Mathew, L.; Banerjee, Sanjay K.; Sanne, A.; Ghosh, R.; Rai, A.; Movva, Hema Chandra Prakash; Sharma, A.; Rao, R.; Mathew, L.; Banerjee, Sanjay K.We report the electrical characteristics of chemical vapor deposited (CVD) monolayer molybdenum disulfide (MoS2) top-gated field-effect transistors (FETs) on silicon nitride (Si3N4) substrates. We show that Si3N4 substrates offer comparable electrical performance to thermally grown SiO2 substrates for MoS2 FETs, offering an attractive passivating substrate for transition-metal dichalcogenides (TMD) with a smooth surface morphology. Single-crystal MoS2 grains are grown via vapor transport process using solid precursors directly on low pressure CVD Si3N4, eliminating the need for transfer processes which degrade electrical performance. Monolayer top-gated MoS2 FETs with Al2O3 gate dielectric on Si3N4 achieve a room temperature mobility of 24 cm(2)/V s with I-on/I-off current ratios exceeding 10(7). Using HfO2 as a gate dielectric, monolayer top-gated CVD MoS2 FETs on Si3N4 achieve current densities of 55 mu A/mu m and a transconductance of 6.12 mu S/mu m at V-tg of -5V and V-ds of 2V. We observe an increase in mobility at lower temperatures, indicating phonon scattering may dominate over charged impurity scattering in our devices. Our results show that Si3N4 is an attractive alternative to thermally grown SiO2 substrate for TMD FETs. (C) 2015 AIP Publishing LLC.Item The Use of City Directories in the Study of Urban Populations: A Methodological Note(University of Texas at Austin, 1942-01-08) Bureau of Research in the Social Sciences