Browsing by Subject "PECVD"
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Item Dynamic feature analysis of an industrial PECVD tool with connection to operation-dependent degradation modeling(2010-08) Bleakie, Alexander Q.; Djurdjanovic, Dragan; Longoria, RaulAn analysis that is based on the monitoring of dynamic features from in-situ sensors of an industrial PECVD tool is presented. Linear Discriminant Analysis is used to determine which features are the most sensitive to various changes in the tool condition. The concept of Confidence Values (CVs) is used to quantify statistical changes of these dynamic features as the condition of the tool changed. Two data sets were collected from a PECVD tool in the facilities of a well-known equipment supplier. Dynamic features coming from the RF plasma power and matching capacitors’ sensors are shown to be sensitive to various changes in the cleaning cycles for Si-N, Si-O₂, and TEOS depositions. Quantifying the statistical distributions of the sensitive sensor features during tool condition changes is important for determining which sensor features are necessary to monitor in order to predict the tool chamber health. Results show that these RF plasma sensors could be used to track changes inside the tool chamber.Item Mitigation of the radioxenon memory effect in beta-gamma detector systems by deposition of thin film diffusion barriers on plastic scintillator(2010-12) Fay, Alexander Gary; Biegalski, Steven R.; Haas, DerekThe significance of the radioxenon memory effect in the context of the International Monitoring System of the Comprehensive Nuclear-Test-Ban Treaty is introduced as motivation for the project. Existing work regarding xenon memory effect reduction and thin film diffusion barriers is surveyed. Experimental techniques for radioxenon production and exposure, as well as for thin film deposition on plastic by plasma enhanced chemical vapor deposition (PECVD), are detailed. A deposition rate of 76.5 nm min⁻¹ of SiO₂ is measured for specific PECVD parameters. Relative activity calculations show agreement within 5% between identically exposed samples counted on parallel detectors. Memory effect reductions of up to 59±1.8% for 900 nm SiO₂ films produced by plasma enhanced chemical vapor deposition and of up to 77±3.7% for 50 nm Al₂O₃ films produced by atomic layer deposition are shown. Future work is suggested for production of more effective diffusion barriers and expansion to testing in operational monitoring stations.Item Remote plasma chemical vapor deposition for high efficiency heterojunction solar cells on low cost, ultra-thin, semiconductor-on-metal substrates(2014-12) Onyegam, Emmanuel U.; Banerjee, Sanjay; Yu, Edward T; Sreenivasan, S.V.; Tutuc, Emanuel; Rao, Rajesh AIn the crystalline Si solar cell industry, there is a push to reduce module cost through a combination of thinner substrates and increased cell efficiency. Achieving solar cells with sub-100 µm substrates cost-effectively is a formidable task because such thin substrates impose stringent handling requirements and thermal budget due to their flexibility, ease of breakage, and low yield. Moreover, as the substrate thickness decreases the surface passivation quality dictates the performance of the cells. Crystalline Si heterojunction (HJ) solar cells based on hydrogenated amorphous silicon (a-Si:H) have attracted significant interest in recent years due to their excellent surface passivation properties, potential for high efficiency, low thermal budget and low cost. HJ cells with ultra-passivated surfaces showing > 700 mV open-circuit voltages (Voc) and > 20% conversion efficiency have been demonstrated. In these cells, it has been identified that high-quality a-Si:H films deposited by a low-damage plasma process is key to achieving such high cell performance. However, the options for low-damage plasma deposition process are limited. The main objectives of this work are to develop a low-plasma damage a-Si:H thin film deposition process based on remote plasma chemical vapor deposition (RPCVD) and to demonstrate high efficiency HJ solar cells on bulk substrates as well as on ultra-thin silicon and germanium substrates obtained by a novel, low-cost semiconductor-on-metal (SOM) technology. This manuscript presents a detailed description of the RPCVD system and the process leading to the realization of high quality a-Si:H thin films and high efficiency HJ solar cells. First, p-type a-Si:H thin films are developed and optimized, then HJ solar cells are subsequently fabricated on bulk and ultra-thin Si and Ge SOM substrates without intrinsic a-Si:H passivation. Single HJ cells on ~ 500 µm bulk Si and ~25 µm ultra-thin substrates exhibited conversion efficiencies of η = 16% (Voc = 615 mV, Jsc = 34 mA/cm2, and FF = 77%) and η = 11.2% (Voc = 605 mV, Jsc = 29.6 mA/cm2, and FF = 62.8%), respectively. The performance of the ~25 µm cell was further improved to η = 13.4% (Voc = 645 mV, Jsc = 31.4 mA/cm2, and FF = 66.2%) by implementing the dual HJ architecture without front side i-layer passivation. For single HJ cells based on Ge substrates, the results were η = 1.78 % (Voc = 148 mV, Jsc = 35.1 mA/cm2, and FF = 1.78%) on ~500 µm bulk Ge, compared to η =5.3% (Voc = 203 mV, Jsc = 44.7 mA/cm2, and FF = 5.28%) on ~ 50 µm Ge SOM substrates. Respectively, the results obtained on ultra-thin SOM substrates are among the highest reported in literature for based on comparable architecture and substrate thickness. In order to achieve improved cell performance, dual HJ cells with i-layer passivation of both surfaces were fabricated. First, optimized RPCVD-based i-layer films were developed by varying the deposition temperature and H2 dilution ratio (R). It was found that excellent surface passivation on planar substrates with as-deposited minority carrier lifetimes > 1 ms is achievable by using deposition temperature of 200 ºC and moderate dilution ratio 0.5 ≤ R ≤ 1, even without the more rigorous RCA pre-cleaning process typically used in literature for achieving comparable results. Subsequently, dual HJ solar cells with i-layer films were demonstrated on planar and textured bulk Si substrates showing improved conversion efficiencies of η = 17.3% (Voc = 664 mV, Jsc = 34.34 mA/cm2 and FF = 76%) and η = 19.4% (Voc = 643 mV, Jsc = 38.99 mA/cm2, and FF = 77.5%), respectively.Item Toward Modification of Flow Behavior and Processability of Polypropylene Powders in SLS by Fluidized Bed Coating with In-Situ Plasma Produced Silica Nanoparticles(University of Texas at Austin, 2019) Gomez Bonilla, Juan S.; Trzenschiok, Holger; Lanyi, Franz; Schubert, Dirk W.; Bück, Andreas; Schmidt, Jochen; Peukert, WolfgangThe processability of selective laser sintering (SLS) powders and the characteristics of the generated parts depend amongst others on the flowability. To increase the flowability, SLS powders are usually functionalized with flowing agents. Flowing agents are typically applied by dry particle coating. The optimization of the process parameters necessary to achieve a homogenous coating avoiding segregation is still empirical. In this contribution, an alternative process to particle dry coating is presented. This process integrates the synthesis of silica nanoparticles via plasma enhanced chemical vapor deposition (PECVD) and coating of polymer host particles in a fluidized bed in a single process. The influence of the treatment time on the packing density and flow behavior of the powders is investigated. Test specimen are produced to assess the influence of the treatment on the processability of the powders and the mechanical properties of the produced parts.