Browsing by Subject "Germanium crystals"
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Item Metal-oxide-semiconductor devices based on epitaxial germanium-carbon layers grown directly on silicon substrates by ultra-high-vacuum chemical vapor deposition(2006) Kelly, David Quest; Banerjee, SanjayAfter the integrated circuit was invented in 1959, complementary metal-oxidesemiconductor (CMOS) technology soon became the mainstay of the semiconductor industry. Silicon-based CMOS has dominated logic technologies for decades. During this time, chip performance has grown at an exponential rate at the cost of higher power consumption and increased process complexity. The performance gains have been made possible through scaling down circuit dimensions by improvements in lithography capabilities. Since scaling cannot continue forever, researchers have vigorously pursued new ways of improving the performance of metal-oxide-semiconductor field-effect transistors (MOSFETs) without having to shrink gate lengths and reduce the gate insulator thickness. Strained silicon, with its ability to boost transistor current by improving the channel mobility, is one of the methods that has already found its way into production. viii Although not yet in production, high-κ dielectrics have also drawn wide interest in industry since they allow for the reduction of the electrical oxide thickness of the gate stack without having to reduce the physical thickness of the dielectric. Further out on the horizon is the incorporation of high-mobility materials such as germanium (Ge), silicongermanium (Si1-xGex), and the III-V semiconductors. Among the high-mobility materials, Ge has drawn the most attention because it has been shown to be compatible with high-κ dielectrics and to produce high drive currents compared to Si. Among the most difficult challenges for integrating Ge on Si is finding a suitable method for reducing the number of crystal defects. The use of strainrelaxed Si1-xGex buffers has proven successful for reducing the threading dislocation density in Ge epitaxial layers, but questions remain as to the viability of this method in terms of cost and process complexity. This dissertation presents research on thin germanium-carbon (Ge1-yCy) layers on Si for the fabrication of MOS transistors with improved drive currents. By incorporating a small amount of C in Ge, the crystal quality of Ge epitaxial layers grown directly on Si can be dramatically improved. The Ge1-yCy layers have been used to fabricate high-drivecurrent p-MOSFETs with high-κ dielectrics and metal gates. In addition to the electrical results, materials-related experimental data was acquired and analyzed to provide insights on the surface morphology, crystal quality, strain, C incorporation, and growth kinetics of the Ge1-yCy layers. This work describes an exciting new possibility for the ultimate goal of incorporating high-mobility semiconductor materials in CMOS technology.Item Selective silicon and germanium nanoparticle deposition on amorphous surfaces(2007-08) Coffee, Shawn Stephen, 1978-; Ekerdt, John G.This dissertation describes the development of a process for the precise positioning of semiconductor nanoparticles grown by hot wire chemical vapor deposition and thermal chemical vapor deposition on amorphous dielectrics, and it presents two studies that demonstrate the process. The studies entailed growth and characterization using surface science techniques and scanning electron microscopy. The two systems, Ge nanoparticles on HfO₂ and Si nanoparticles on Si₃N₄, are of interest because their electronic properties show potential in flash memory devices. The positioning technique resulted in nanoparticles deposited within 20 nm diameter feature arrays having a 6x10¹⁰ cm⁻² feature density. Self-assembling diblock copolymer poly(styrene-b-methyl methacrylate) thin films served as the patterning soft mask. The diblock copolymer features were transferred using a CHF₃/O₂ reactive ion etch chemistry into a thin film SiO₂ hard mask to expose the desired HfO₂ or Si₃N₄ deposition surface underneath. Selective deposition upon exposed pore bottoms was performed at conditions where adatom accumulation occurred on the HfO₂ or Si₃N₄ surfaces and not upon the SiO₂ mask template. The selective deposition temperatures for the Ge/HfO₂ and Si/Si₃N₄ systems were 700 to 800 K and 900 to 1025 K, respectively. Germanium nucleation on HfO₂ is limited from hot wire chemical vapor deposition by depositing nanoparticles within 67% of the available features. Unity filling of features with Ge nanoparticles was achieved using room temperature adatom seeding before deposition. Nanoparticle shape and size are regulated through the Ge interactions with the SiO₂ feature sidewalls with the adatom removal rate from the features being a function of temperature. The SiO₂ mask limited Ge nanoparticle growth laterally to within ~5 nm of the hard mask at 800 K. Silicon deposition on patterned Si₃N₄ has multiple nanoparticles, up to four, within individual 20 nm features resulting from the highly reactive Si₃N₄ deposition surface. Silicon nucleation and continued nanoparticle growth is a linear function of deposition flux and an inverse function of sample temperature. Diblock copolymer organization can be directed into continuous crystalline domains having ordered minority phases in a process known as graphoepitaxy. In graphoepitaxy forced alignment within microscopic features occurs provided certain dimensional constraints are satisfied. Graphoepitaxy was attempted to precisely locate 20 nm diameter features for selective Ge or Si deposition and initial studies are presented. In addition to precise nanoparticle positioning studies, kinetic studies were performed using the Ge/HfO₂ material system. Germanium hot wire chemical vapor deposition on unpatterned HfO₂ surfaces was interpreted within the mathematical framework of mean-field nucleation theory. A critical cluster size of zero and critical cluster activation energy of 0.4 to 0.6 eV were estimated. Restricting HfO₂ deposition area to a 200 nm to 100 [mu]m feature-width range using SiO₂ decreases nanoparticle density compared to unpatterned surfaces. The studies reveal the activation energies for surface diffusion, nucleation, and Ge etching of SiO₂ are similar in magnitude. Comparable activation energies for Ge desorption, surface diffusion and cluster formation obscure the change with temperature an individual process rate has on nanoparticle growth characteristics as the feature size changes.Item Surface chemistry of FeHx with dielectric surfaces : towards directed nanocrystal growth(2008-08) Winkenwerder, Wyatt August, 1981-; Ekerdt, John G.The surface chemistry of GeH[subscript x] with dielectric surfaces is relevant to the application of germanium (Ge) nanocrystals for nanocrystal flash memory devices. GeH[subscript x] surface chemistry was first explored for thermally-grown SiO₂ revealing that GeH[subscript x] undergoes two temperature dependent reactions that remove Ge from the SiO₂ surface as GeH₄ and Ge, respectively. Ge only accumulates due to reactions between GeH[subscript x] species that form stable Ge clusters on the SiO₂ surface. Next, a Si-etched SiO₂ surface is probed by GeH[subscript x] revealing that the Si-etching defect activates the surface toward Ge deposition. The activation involves two separate reactions involving, first, the capture of GeH[subscript x] by the defect and second, a reaction between the captured Ge and remaining GeH[subscript x] species leading to the formation of Ge clusters. Reacting the defect with diborane, deactivates it toward GeH[subscript x] and also deactivates intrinsic hydroxyl groups toward GeH[subscript x] adsorption. A structure is proposed for the Si-etching defect. The surface chemistry of GeHx with HfO₂ is studied showing that the hafnium germinate that forms beneath the Ge nanocrystals exists as islands and not a continuous film. Annealing the hafnium germinate under a silane atmosphere will reduce it to Ge while leading to the deposition of hafnium silicate (HfSiO[subscript x]) and silicon (Si). Treating the HfO₂ with silane prior to Ge nanocrystal growth yields a surface with hafnium silicate islands on which Si also deposits. Ge deposition on this surface leads to the suppression of hafnium germinate formation. Electrical testing of capacitors made from Ge nanocrystals and HfO₂ shows that Ge nanocrystals encapsulated in Si/HfSiO[subscript x] layers have greatly improved retention characteristics.