Statistics for Top-Gated Chemical Vapor Deposited Mos2 Field-Effect Transistors On Si3N4 Substrates

Total visits

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Top-Gated Chemical Vapor Deposited Mos2 Field-Effect Transistors On Si3N4 Substrates 175

Total visits per month

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December 2023 0
January 2024 0
February 2024 0
March 2024 0
April 2024 0
May 2024 0
June 2024 0

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2015_02_Top.pdf 910
2015_02_Top.pdf(legacy) 787

Top country views

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United States 151
Germany 33
France 27
United Kingdom 19
Taiwan 13
India 11
China 8
South Korea 8
Poland 7
Finland 5
Hong Kong SAR China 3
Ireland 2
Italy 2
Russia 2
Ukraine 2
Austria 1
Azerbaijan 1
Belgium 1
Canada 1
Indonesia 1
Israel 1
Morocco 1
Serbia 1
Turkey 1

Top city views

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Ashburn 60
Taipei 8
Austin 6
Beijing 4
Puducherry 4
Seoul 4
Nuremberg 3
Suwon 3
Bengaluru 2
Central District 2
Council Bluffs 2
Hangzhou 2
Hsinchu 2
Kaohsiung City 2
Mumbai 2
Troy 2
Tucson 2
Woodbridge 2
Athens 1
Atlanta 1
Avranches 1
Baku 1
Bangalore 1
Berkeley 1
Boise 1
Brooklyn 1
Buffalo 1
Central 1
Chandler 1
Chennai 1
Des Moines 1
Dublin 1
Durham 1
Frankfurt am Main 1
Houston 1
Hyattsville 1
Jakarta 1
Jinan 1
Lake Forest 1
Minneapolis 1
Moscow 1
Mountain View 1
Munich 1
Nanjing 1
New Haven 1
Novi Sad 1
Olalla 1
Philadelphia 1
Phoenix 1
Pohang 1
Pondicherry 1
Richardson 1
Riverside 1
Round Rock 1
Saint-Denis 1
Southampton 1
Tainan 1
Togliatti 1
Tokyo 1
Tsukuba 1
Urbana 1
Warsaw 1
West Lafayette 1
Wilmington 1
Winona 1