Synthesis of high-quality graphene via chemical vapor deposition

dc.contributor.advisorLi, Wei (Of University of Texas at Austin)
dc.contributor.committeeMemberCullinan, Michael
dc.contributor.committeeMemberHo, Paul S.
dc.contributor.committeeMemberKoo, Joseph
dc.contributor.committeeMemberLiu, Yuanyue
dc.creatorLee, Byoungdo
dc.date.accessioned2021-06-25T01:31:15Z
dc.date.available2021-06-25T01:31:15Z
dc.date.created2020-08
dc.date.issued2020-08-14
dc.date.submittedAugust 2020
dc.date.updated2021-06-25T01:31:16Z
dc.description.abstractDue to its extraordinary properties, graphene has been attracting enormous interest for large-scale applications. Among preparation methods of graphene, low-pressure chemical vapor deposition (LPCVD) remains the most efficient and scalable method to produce high quality and cost-effective graphene in large size. Control over the high quality of graphene is indispensable to synthesize graphene by LPCVD. This research investigates a factor analysis affecting the graphene quality under five key LPCVD process parameters. These parameters are responsible for the graphene quality ranging from the number of graphene layers to the number of graphene grains. The statistical analysis on both the main process parameters and second-order interaction effects of experiment is conducted to review the interplay of LPCVD process parameters. Furthermore, cooling rate study discovers that fast cooling rate and temperature dependent gas feeding time are required to obtain monolayer graphene with high quality. Copper (Cu) wire is used in many electrical devices because of their inherent beneficial properties, but it is easily oxidized in air. Graphene is a good candidate for anti-corrosion and anti-oxidation due to its impermeability to oxygen or etchants and its atomically thin thickness. The following study characterizes the anti-oxidation and anti-corrosion performances of Cu wire with different numbers of graphene layers and grains. Monolayer, bilayer, and multilayer graphene are synthesized on bare Cu wire by adjusting growth parameters of LPCVD process. The higher number of graphene layers leads to low resistivity values at high temperatures due to the delay of the oxidation process of the Cu wire. The resistivity of twisted bare Cu wire pair is considerably higher than the twisted pair one covered with multilayer graphene. The lower cooling rate, the better protection effects against oxidation, leading to a small number of larger graphene grains. The etching time of Cu wire with multilayer-graphene protection doubles comparing to their bare Cu wire counterparts. This research provides not only guidelines to control the quality of graphene for large scale fabrication, but also baseline data for research on the temperature dependent anti-oxidation and anti-corrosion performances of multilayered graphene for Cu and Cu wires.
dc.description.departmentMechanical Engineering
dc.format.mimetypeapplication/pdf
dc.identifier.urihttps://hdl.handle.net/2152/86671
dc.identifier.urihttp://dx.doi.org/10.26153/tsw/13622
dc.language.isoen
dc.subjectGraphene
dc.subjectChemical vapor deposition
dc.subjectFactor analysis
dc.subjectCooling rate
dc.subjectCopper wire
dc.subjectAnti-oxidation
dc.subjectAnti-corrosion
dc.titleSynthesis of high-quality graphene via chemical vapor deposition
dc.typeThesis
dc.type.materialtext
thesis.degree.departmentMechanical Engineering
thesis.degree.disciplineMechanical Engineering
thesis.degree.grantorThe University of Texas at Austin
thesis.degree.levelDoctoral
thesis.degree.nameDoctor of Philosophy

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