Low temperature doped and undoped expitaxial Si and Si1-xGex growth

dc.contributor.advisorNot available
dc.creatorLi, Chi-nan Brian
dc.date.accessioned2019-04-25T16:45:38Z
dc.date.available2019-04-25T16:45:38Z
dc.date.issued1995-05
dc.description.departmentElectrical and Computer Engineeringen_US
dc.format.mediumelectronicen_US
dc.identifier.urihttps://hdl.handle.net/2152/74392
dc.identifier.urihttp://dx.doi.org/10.26153/tsw/1512
dc.language.isoengen_US
dc.relation.ispartofUT Electronic Theses and Dissertationsen_US
dc.rightsCopyright © is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en_US
dc.rights.restrictionRestricteden_US
dc.subject.lcshSemiconductor doping
dc.subject.lcshSilicon
dc.subject.lcshEpitaxy
dc.subject.lcshThin films
dc.subject.lcshPlasma-enhanced chemical vapor deposition
dc.titleLow temperature doped and undoped expitaxial Si and Si1-xGex growthen_US
dc.typeThesisen_US
dc.type.genreThesisen_US
thesis.degree.departmentElectrical and Computer Engineeringen_US
thesis.degree.disciplineElectrical Engineeringen_US
thesis.degree.grantorUniversity of Texas at Austinen_US
thesis.degree.levelDoctoralen_US
thesis.degree.nameDoctor of Philosophyen_US

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