Monte Carlo simulation of arsenic ion implantation into single- crystal silicon

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Date

1995-12

Authors

Yang, Shyh-horng

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Volume Title

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Abstract

Department

Electrical and Computer Engineering

Description

Keywords

LCSH Subject Headings

Monte Carlo method, Simulation, Metal oxide semiconductors--Reliability, Hot carriers--Reliability, Silicon crystals

Citation

URI

https://hdl.handle.net/2152/74410
 http://dx.doi.org/10.26153/tsw/1530

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