Theory of ferromagnetic (iii,mn)v semiconductors

dc.contributor.utaustinauthorMacDonald, A. H.en_US
dc.creatorJungwirth, T.en_US
dc.creatorSinova, Jairoen_US
dc.creatorMasek, J.en_US
dc.creatorKucera, J.en_US
dc.creatorMacDonald, A. H.en_US
dc.date.accessioned2017-07-18T20:09:35Z
dc.date.available2017-07-18T20:09:35Z
dc.date.issued2006-07en_US
dc.description.abstractThe body of research on (III,Mn)V diluted magnetic semiconductors (DMSs) initiated during the 1990s has concentrated on three major fronts: (i) the microscopic origins and fundamental physics of the ferromagnetism that occurs in these systems, (ii) the materials science of growth and defects, and (iii) the development of spintronic devices with new functionalities. This article reviews the current status of the field, concentrating on the first two, more mature research directions. From the fundamental point of view, (Ga,Mn)As and several other (III,Mn)V DMSs are now regarded as textbook examples of a rare class of robust ferromagnets with dilute magnetic moments coupled by delocalized charge carriers. Both local moments and itinerant holes are provided by Mn, which makes the systems particularly favorable for realizing this unusual ordered state. Advances in growth and postgrowth-treatment techniques have played a central role in the field, often pushing the limits of dilute Mn-moment densities and the uniformity and purity of materials far beyond those allowed by equilibrium thermodynamics. In (III,Mn)V compounds, material quality and magnetic properties are intimately connected. This review focuses on the theoretical understanding of the origins of ferromagnetism and basic structural, magnetic, magnetotransport, and magneto-optical characteristics of simple (III,Mn)V epilayers, with the main emphasis on (Ga,Mn)As. Conclusions are arrived at based on an extensive literature covering results of complementary ab initio and effective Hamiltonian computational techniques, and on comparisons between theory and experiment. The applicability of ferromagnetic semiconductors in microelectronic technologies requires increasing Curie temperatures from the current record of 173 K in (Ga,Mn)As epilayers to above room temperature. The issue of whether or not this is a realistic expectation for (III,Mn)V DMSs is a central question in the field and motivates many of the analyses presented in this review.en_US
dc.description.departmentPhysicsen_US
dc.description.sponsorshipen_US
dc.identifierdoi:10.15781/T21C1TX12
dc.identifier.citationJungwirth, T., Jairo Sinova, J. Mašek, J. Ku?era, and A. H. MacDonald. "Theory of ferromagnetic (III, Mn) V semiconductors." Reviews of Modern Physics 78, no. 3 (2006): 809.en_US
dc.identifier.doi10.1103/RevModPhys.78.809en_US
dc.identifier.issn0034-6861en_US
dc.identifier.urihttp://hdl.handle.net/2152/61085
dc.language.isoEnglishen_US
dc.relation.ispartofUT Faculty/Researcher Worksen_US
dc.relation.ispartofserialReviews of Modern Physicsen_US
dc.rightsAdministrative deposit of works to Texas ScholarWorks: This works author(s) is or was a University faculty member, student or staff member; this article is already available through open access or the publisher allows a PDF version of the article to be freely posted online. The library makes the deposit as a matter of fair use (for scholarly, educational, and research purposes), and to preserve the work and further secure public access to the works of the University.en_US
dc.rights.restrictionopenen_US
dc.subjectdiluted magnetic semiconductorsen_US
dc.subjectiii-v-semiconductorsen_US
dc.subjectelectron-paramagnetic-resonanceen_US
dc.subjectroom-temperature ferromagnetismen_US
dc.subjecttransition-metal impuritiesen_US
dc.subjectneutral manganese acceptoren_US
dc.subjectmolecular-beamen_US
dc.subjectepitaxyen_US
dc.subjectquality gamnas filmsen_US
dc.subjectx-ray-absorptionen_US
dc.subjectcurie-temperatureen_US
dc.titleTheory of ferromagnetic (iii,mn)v semiconductorsen_US
dc.typeReviewen_US

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