Top-Gated Chemical Vapor Deposited Mos2 Field-Effect Transistors On Si3N4 Substrates

dc.contributor.utaustinauthorSanne, A.en
dc.contributor.utaustinauthorGhosh, R.en
dc.contributor.utaustinauthorRai, A.en
dc.contributor.utaustinauthorMovva, Hema Chandra Prakashen
dc.contributor.utaustinauthorSharma, A.en
dc.contributor.utaustinauthorRao, R.en
dc.contributor.utaustinauthorMathew, L.en
dc.contributor.utaustinauthorBanerjee, Sanjay K.en
dc.creatorSanne, A.en
dc.creatorGhosh, R.en
dc.creatorRai, A.en
dc.creatorMovva, Hema Chandra Prakashen
dc.creatorSharma, A.en
dc.creatorRao, R.en
dc.creatorMathew, L.en
dc.creatorBanerjee, Sanjay K.en
dc.date.accessioned2015-09-09T15:50:01Zen
dc.date.available2015-09-09T15:50:01Zen
dc.date.issued2015-02en
dc.description.abstractWe report the electrical characteristics of chemical vapor deposited (CVD) monolayer molybdenum disulfide (MoS2) top-gated field-effect transistors (FETs) on silicon nitride (Si3N4) substrates. We show that Si3N4 substrates offer comparable electrical performance to thermally grown SiO2 substrates for MoS2 FETs, offering an attractive passivating substrate for transition-metal dichalcogenides (TMD) with a smooth surface morphology. Single-crystal MoS2 grains are grown via vapor transport process using solid precursors directly on low pressure CVD Si3N4, eliminating the need for transfer processes which degrade electrical performance. Monolayer top-gated MoS2 FETs with Al2O3 gate dielectric on Si3N4 achieve a room temperature mobility of 24 cm(2)/V s with I-on/I-off current ratios exceeding 10(7). Using HfO2 as a gate dielectric, monolayer top-gated CVD MoS2 FETs on Si3N4 achieve current densities of 55 mu A/mu m and a transconductance of 6.12 mu S/mu m at V-tg of -5V and V-ds of 2V. We observe an increase in mobility at lower temperatures, indicating phonon scattering may dominate over charged impurity scattering in our devices. Our results show that Si3N4 is an attractive alternative to thermally grown SiO2 substrate for TMD FETs. (C) 2015 AIP Publishing LLC.en
dc.description.departmentMicroelectronics Research Centeren
dc.description.sponsorshipSTTR programen
dc.description.sponsorshipNSF NASCENT ERCen
dc.description.sponsorshipArmy Research Office under STTR W911NF-14-P-0030en
dc.identifier.citationSanne, A., Ghosh, R., Rai, A., Movva, H. C. P., Sharma, A., Rao, R., Mathew, L., Banerjee, S. K., >Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates,> Appl. Phys. Lett. 106, 062101 (2015). doi: 10.1063/1.4907885.en
dc.identifier.doi10.1063/1.4907885en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/2152/31047en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/106/6/10.1063/1.4907885en
dc.language.isoEnglishen
dc.relation.ispartofserialApplied Physics Lettersen
dc.rightsAdministrative deposit of works to Texas ScholarWorks: This works author(s) is or was a University faculty member, student or staff member; this article is already available through open access or the publisher allows a PDF version of the article to be freely posted online. The library makes the deposit as a matter of fair use (for scholarly, educational, and research purposes), and to preserve the work and further secure public access to the works of the University.en
dc.rightsCopyright American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en
dc.rights.holderAIPen
dc.subjectmolybdenum-disulfideen
dc.subjectmonolayer mos2en
dc.subjectatomic layersen
dc.subjectfilmsen
dc.subjectmobilityen
dc.subjectphysics, applieden
dc.titleTop-Gated Chemical Vapor Deposited Mos2 Field-Effect Transistors On Si3N4 Substratesen
dc.typeArticleen

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