Scalable, highly stable Si-based metal-insulator-semiconductor photoanodes for water oxidation fabricated using thin-film reactions and electrodeposition

dc.creatorLee, Soonil
dc.creatorJi, Li
dc.creatorDe Palma, Alex C.
dc.creatorYu, Edward T.
dc.date.accessioned2024-02-06T13:42:25Z
dc.date.available2024-02-06T13:42:25Z
dc.date.issued2021-06-25
dc.description.abstractMetal-insulator-semiconductor (MIS) structures are widely used in Si-based solar water- splitting photoelectrodes to protect the Si layer from corrosion. Typically, there is a tradeoff between efficiency and stability when optimizing insulator thickness. Moreover, lithographic patterning is often required for fabricating MIS photoelectrodes. In this study, we demon- strate improved Si-based MIS photoanodes with thick insulating layers fabricated using thin- film reactions to create localized conduction paths through the insulator and electro- deposition to form metal catalyst islands. These fabrication approaches are low-cost and highly scalable, and yield MIS photoanodes with low onset potential, high saturation current density, and excellent stability. By combining this approach with a p +n-Si buried junction, further improved oxygen evolution reaction (OER) performance is achieved with an onset potential of 0.7 V versus reversible hydrogen electrode (RHE) and saturation current density of 32 mA/cm 2 under simulated AM1.5G illumination. Moreover, in stability testing in 1 M KOH aqueous solution, a constant photocurrent density of ~22 mA/cm 2 is maintained at 1.3 V versus RHE for 7 days.
dc.description.departmentCenter for Dynamics and Control of Materials
dc.description.sponsorshipPart of this work was supported by the National Science Foundation (CBET-1702944). This research was partially supported by the National Science Foundation through the Center for Dynamics and Control of Materials: an NSF MRSEC under Cooperative Agreement No. DMR-1720595. This work was performed in part at the University of Texas Microelectronics Research Center, a member of the National Nanotechnology Coordinated Infrastructure (NNCI), which is supported by the National Science Foun- dation (ECCS-2025227).
dc.identifier.citationLee, S., Ji, L., De Palma, A.C. et al. Scalable, highly stable Si-based metal-insulator-semiconductor photoanodes for water oxidation fabricated using thin-film reactions and electrodeposition. Nat Commun 12, 3982 (2021). https://doi.org/10.1038/s41467-021-24229-y
dc.identifier.doihttps://doi.org/10.1038/s41467-021-24229-y
dc.identifier.urihttps://hdl.handle.net/2152/123589
dc.identifier.urihttps://doi.org/10.26153/tsw/50383
dc.language.isoen_US
dc.publisherSpringer Nature Limited
dc.relation.ispartofCenter for Dynamics and Control of Materials Publications
dc.rightsAttribution 3.0 United Statesen
dc.rights.restrictionOpen
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/us/
dc.subjectphotoanodes
dc.titleScalable, highly stable Si-based metal-insulator-semiconductor photoanodes for water oxidation fabricated using thin-film reactions and electrodeposition
dc.typeArticle

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