Sulfurization Engineering of One-Step Low-Temperature MoS2 and WS2 Thin Films for Memristor Device Applications

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dc.creatorGu, Yuqian
dc.creatorSerna, Martha I.
dc.creatorMohan, Sivasakthya
dc.creatorLondoño-Calderon, Alejandra
dc.creatorAhmed, Taimur
dc.creatorHuang, Yifu
dc.creatorLee, Jack
dc.creatorWalia, Sumeet
dc.creatorPettes, Michael T.
dc.creatorLiechti, Kenneth M.
dc.creatorAkinwande, Deji
dc.date.accessioned2024-02-07T20:05:53Z
dc.date.available2024-02-07T20:05:53Z
dc.date.issued2021-10-07
dc.description.abstract2D materials have been of considerable interest as new materials for device applications. Non-volatile resistive switching applications of MoS2 and WS2 have been previously demonstrated; however, these applications are dramatically limited by high temperatures and extended times needed for the large-area synthesis of 2D materials on crystalline substrates. The experimental results demonstrate a one-step sulfurization method to synthesize MoS2 and WS2 at 550 °C in 15 min on sapphire wafers. Furthermore, a large area transfer of the synthesized thin films to SiO2/Si substrates is achieved. Following this, MoS2 and WS2 memristors are fabricated that exhibit stable non-volatile switching and a satisfactory large on/off current ratio (103–105) with good uniformity. Tuning the sulfurization parameters (temperature and metal precursor thickness) is found to be a straightforward and effective strategy to improve the performance of the memristors. The demonstration of large-scale MoS2 and WS2 memristors with a one-step low-temperature sulfurization method with simple strategy to tuning can lead to potential applications such as flexible memory and neuromorphic computing.
dc.description.departmentCenter for Dynamics and Control of Materials
dc.description.sponsorshipThis research was primarily supported by the National Science Foundation through the Center for Dynamics and Control of Materials: an NSF MRSEC under Cooperative Agreement No. DMR-1720595. The work was partly done at the Texas Nanofabrication Facility supported by NSF grant NNCI-2025227. This work was performed in part at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Los Alamos National Laboratory, an affirmative action equal opportunity employer, is managed by Triad National Security, LLC for the U.S. Department of Energy’s NNSA, under contract 89233218CNA000001.
dc.identifier.citationGu, YQ; Serna, MI; Mohan, S; Londono-Calderon, A; Ahmed, T; Huang, YF; Lee, J; Walia, S; Pettes, MT; Liechti, KM; Akinwande, D. Sulfurization Engineering of One-Step Low-Temperature MoS2 and WS2 Thin Films for Memristor Device Applications. Adv. Electron. Mater. 2022, 8(2), 2100515-. DOI: 10.1002/aelm.202100515 .
dc.identifier.doiDOI: 10.1002/aelm.202100515
dc.identifier.urihttps://hdl.handle.net/2152/123626
dc.identifier.urihttps://doi.org/10.26153/tsw/50420
dc.language.isoen_US
dc.publisherJohn Wiley & Sons
dc.relation.ispartofCenter for Dynamics and Control of Materials Publications
dc.rights.restrictionOpen
dc.subject2D materials
dc.subjectresistive switching
dc.subjectsulfurization
dc.subjectthin-film processing
dc.titleSulfurization Engineering of One-Step Low-Temperature MoS2 and WS2 Thin Films for Memristor Device Applications
dc.typeArticle

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