Fabrication of short channel fully printed transistors using chemical gapping techniques with demonstrated switching at 18 GHz

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dc.contributor.advisorChen, Ray T.
dc.creatorGrubb, Peter Mack
dc.creator.orcid0000-0002-1405-7564
dc.date.accessioned2017-04-17T15:06:27Z
dc.date.available2017-04-17T15:06:27Z
dc.date.issued2016-12
dc.date.submittedDecember 2016
dc.date.updated2017-04-17T15:06:27Z
dc.description.abstractThis thesis reports a 100% inkjet printed transistor with a short channel of approximately 1 µm operating at up to 18.21 GHz. The small gap size is achieved through the use of silver inks with different chemical properties to prevent mixing. Semiconducting single walled carbon nanotubes were printed using deposition methodologies for the semiconducting layer. The combination of the short channel and CNT based semiconductors allows for an exceptional experimentally measured on/off ratio of 106. This all inkjet printed transistor potentially allows for the fabrication of devices using roll-to-roll methodologies with no pre or post processing.
dc.description.departmentElectrical and Computer Engineering
dc.format.mimetypeapplication/pdf
dc.identifierdoi:10.15781/T2RV0D58K
dc.identifier.urihttp://hdl.handle.net/2152/46471
dc.language.isoen
dc.subjectPrinted electronics
dc.subjectCarbon nanotubes
dc.subjectShort channel
dc.subjectChemical gaps
dc.subjectHigh speed transistor
dc.subjectPrinted transistor
dc.titleFabrication of short channel fully printed transistors using chemical gapping techniques with demonstrated switching at 18 GHz
dc.typeThesis
dc.type.materialtext
thesis.degree.departmentElectrical and Computer Engineering
thesis.degree.disciplineElectrical and Computer engineering
thesis.degree.grantorThe University of Texas at Austin
thesis.degree.levelMasters
thesis.degree.nameMaster of Science in Engineering

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