Modeling and simulation of Si- and SiGe-base bipolar transistors operating at a wide range of temperatures

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Date

1995-05

Authors

Shaheed, M. Reaz, 1965-

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Abstract

Department

Electrical and Computer Engineering

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Keywords

LCSH Subject Headings

Bipolar transistors--Mathematical models, Semiconductor doping--Mathematical models

Citation

URI

https://hdl.handle.net/2152/74345
 http://dx.doi.org/10.26153/tsw/1465

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