Deposition Rates of Silicon Carbide by Selected Area Laser Deposition

The deposition rates using pure tetramethylsilane (TMS) as precursor are calculated numerically for a ~od .grown by th~ .Selected Area Laser Dep?sition J?rocess. In particular, the dependence of the kinettcs of deposItion on pressure of TMS IS examIned. The conditions for which volcano d~pos~tion pr?files occur are also investigated. The results show that deposition rate increases wIth IncreasIng pressure and then becomes saturated. In addition, adsorption-desorption phenomena, rather than effects ofreactants depletion, are responsible for the volcano deposition profile observed experimentally