Deposition Rates of Silicon Carbide by Selected Area Laser Deposition

Date
1995
Authors
Lee, Y.L.
Tompkins, J.V.
Sanchez, J.M.
Marcus, H.L.
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Abstract

The deposition rates using pure tetramethylsilane (TMS) as precursor are calculated numerically for a ~od .grown by th~ .Selected Area Laser Dep?sition J?rocess. In particular, the dependence of the kinettcs of deposItion on pressure of TMS IS examIned. The conditions for which volcano d~pos~tion pr?files occur are also investigated. The results show that deposition rate increases wIth IncreasIng pressure and then becomes saturated. In addition, adsorption-desorption phenomena, rather than effects ofreactants depletion, are responsible for the volcano deposition profile observed experimentally

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