All Electrical Control and Temperature Dependence of the Spin and Valley Hall Effect in Monolayer WSe2 Transistors
| dc.creator | Li, Xintong | |
| dc.creator | Liu, Zhida | |
| dc.creator | Liu, Yihan | |
| dc.creator | Karki, Suyogya | |
| dc.creator | Li, Xiaoqin | |
| dc.creator | Akinwande, Deji | |
| dc.creator | Incorvia, Jean Anne C. | |
| dc.date.accessioned | 2024-02-13T15:27:16Z | |
| dc.date.available | 2024-02-13T15:27:16Z | |
| dc.date.issued | 2022-02-23 | |
| dc.description.abstract | Heavy metal-based two-dimensional van der Waals materials have a large, coupled spin and valley Hall effect (SVHE) that has potential use in spintronics and valleytronics. Optical measurements of the SVHE have largely been performed below 30 K and understanding of the SVHE-induced spin/valley polarizations that can be electrically generated is limited. Here, we study the SVHE in monolayer p-type tungsten diselenide (WSe2). Kerr rotation (KR) measurements show the spatial distribution of the SVHE at different temperatures, its persistence up to 160 K, and that it can be electrically modulated via gate and drain bias. A spin/valley drift and diffusion model together with reflection spectra data is used to interpret the KR data and predict a lower-bound spin/valley lifetime of 4.1 ns below 90 K and 0.26 ns at 160 K. The excess spin and valley per unit length along the edge is calculated to be 109 per micron at 45 K, which corresponds to a spin/valley polarization on the edge of 6%. These results are important steps towards practical use of the SVHE. | |
| dc.description.department | Center for Dynamics and Control of Materials | |
| dc.description.sponsorship | This research was primarily supported by the National Science Foundation (NSF) through the Center for Dynamics and Control of Materials: an NSF MRSEC under Cooperative Agreement No. DMR-1720595. The optical measurement setup with supported in part by the NSF-Major Research Instrumentation Program (Grant MRI-2019130). This work was performed in part at the University of Texas Microelectronics Research Center, a member of the National Nanotechnology Coordinated Infrastructure (NNCI), which is supported by the National Science Foundation (Grant ECCS-2025227). The authors acknowledge the use of shared research facilities supported in part by the Texas Materials Institute and the Texas Nanofabrication Facility supported by NSF Grant No. NNCI-1542159. | |
| dc.identifier.doi | https://doi.org/10.48550/arXiv.2202.11774 | |
| dc.identifier.uri | https://hdl.handle.net/2152/123667 | |
| dc.identifier.uri | https://doi.org/10.26153/tsw/50461 | |
| dc.language.iso | en_US | |
| dc.relation.ispartof | Center for Dynamics and Control of Materials Publications | |
| dc.rights.restriction | Open | |
| dc.subject | Hall effect | |
| dc.title | All Electrical Control and Temperature Dependence of the Spin and Valley Hall Effect in Monolayer WSe2 Transistors | |
| dc.type | Article |