All-epitaxial, laterally structured plasmonic materials

dc.creatorSkipper, Alec M.
dc.creatorPetluru, Priyanka
dc.creatorIronside, Daniel J.
dc.creatorGarcia, Ashlee M.
dc.creatorMuhowski, Aaron J.
dc.creatorWasserman, Daniel
dc.creatorBank, Seth R.
dc.date.accessioned2024-02-12T19:15:06Z
dc.date.available2024-02-12T19:15:06Z
dc.date.issued2022-04-06
dc.description.abstractOptoelectronic devices in the mid-infrared have attracted significant interest due to numerous potential applications in communications and sensing. Molecular beam epitaxial (MBE) growth of highly doped InAs has emerged as a promising “designer metal” platform for the plas- monic enhancement of mid-infrared devices. However, while typical plasmonic materials can be patterned to engineer strong localized reso- nances, the lack of lateral control in conventional MBE growth makes it challenging to create similar structures compatible with monolithically grown plasmonic InAs. To this end, we report the growth of highly doped InAs plasmonic ridges for the localized resonant enhancement of mid-IR emitters and absorbers. Furthermore, we demonstrate a method for regaining a planar surface above plasmonic cor- rugations, creating a pathway to epitaxially integrate these structures into active devices that leverage conventional growth and fabrication techniques.
dc.description.departmentCenter for Dynamics and Control of Materials
dc.description.sponsorshipThis research was partially supported by the National Science Foundation through the Center for Dynamics and Control of Materials: an NSF Materials Research Science and Engineering Center (MRSEC) under Cooperative Agreement No. DMR-1720595, as well as Nos. DMR-1839175 and ECCS-1926187. This work was performed in part at the University of Texas Microelectronics Research Center, a member of the National Nanotechnology Coordinated Infrastructure (NNCI), which was supported by the National Science Foundation (Grant No. ECCS-1542159).
dc.identifier.citationAlec M. Skipper, Priyanka Petluru, Daniel J. Ironside, Ashlee M. García, Aaron J. Muhowski, Daniel Wasserman, Seth R. Bank; All-epitaxial, laterally structured plasmonic materials. Appl. Phys. Lett. 18 April 2022; 120 (16): 161103. https://doi.org/10.1063/5.0094677
dc.identifier.doihttps://doi.org/10.1063/5.0094677
dc.identifier.urihttps://hdl.handle.net/2152/123650
dc.identifier.urihttps://doi.org/10.26153/tsw/50444
dc.language.isoen_US
dc.publisherAIP Publishing
dc.relation.ispartofCenter for Dynamics and Control of Materials Publications
dc.rights.restrictionOpen
dc.subjectplasmonic
dc.titleAll-epitaxial, laterally structured plasmonic materials
dc.typeArticle

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