Moiré potential impedes interlayer exciton diffusion in van der Waals heterostructures

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dc.creatorChoi, Junho
dc.creatorHsu, Wei-Ting
dc.creatorLu, Li-Syuan
dc.creatorSun, Liuyang
dc.creatorCheng, Hui-Yu
dc.creatorLee, Ming-Hao
dc.creatorQuan, Jiamin
dc.creatorTran, Kha Xuan
dc.creatorWang, Chun-Yuan
dc.creatorStaab, Matthew
dc.creatorJones, Kayleigh
dc.creatorTaniguchi, Takashi
dc.creatorWatanabe, Kenji
dc.creatorChu, Ming-Wen
dc.creatorGwo, Shangjr
dc.creatorKim, Suenne
dc.creatorShih, Chih-Kang
dc.creatorLi, Xiaoqin
dc.creatorChang, Wen-Hao
dc.date.accessioned2024-01-26T13:43:59Z
dc.date.available2024-01-26T13:43:59Z
dc.date.issued2020-09-23
dc.description.abstractThe properties of van der Waals heterostructures are drastically altered by a tunable moiré superlattice arising from periodically varying atomic alignment between the layers. Exciton diffusion represents an important chan- nel of energy transport in transition metal dichalcogenides (TMDs). While early studies performed on TMD hetero- bilayers suggested that carriers and excitons exhibit long diffusion, a rich variety of scenarios can exist. In a moiré crystal with a large supercell and deep potential, interlayer excitons may be completely localized. As the moiré period reduces at a larger twist angle, excitons can tunnel between supercells and diffuse over a longer lifetime. The diffusion should be the longest in commensurate heterostructures where the moiré superlattice is completely absent. Here, we experimentally demonstrate the rich phenomena of interlayer exciton diffusion in WSe2/MoSe2 heterostructures by comparing several samples prepared with chemical vapor deposition and mechanical stack- ing with accurately controlled twist angles.
dc.description.departmentCenter for Dynamics and Control of Materials
dc.description.sponsorshipby the Department of Energy, Basic Energy Science program via grant DE- SC0019398. Partial support for K.T. was provided by the NSF MRSEC program DMR-1720595, which also facilitated the collaboration between the group of C.-K.S. and X.L. L.S. and C.-K.S. were supported by the Welch Foundation via grant F-1662 and F-1672. M.S. and K.J. were supported by NSF EFMA-1542747. C.-K.S. acknowledges support from the U.S. Air Force via grant FA2386-18-1-4097. W.-H.C. acknowledges the support from the Ministry of Science and Technology (MOST) of Taiwan (105-2119-M-009-014-MY3 and 107-2112-M-009-024-MY3). W.-T.H. acknowledges the support from the MOST of Taiwan (MOST-107-2917-I-564-010). M.-H.L. and M.-W.C. acknowledge the support from MOST of Taiwan. S.G. and C.-Y.W. acknowledge the support from the MOST of Taiwan (MOST 108-2119-M-007-008). J.Q. acknowledges the support from the China Scholarship Council (grant no. 201706050068). K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan and the CREST (JPMJCR15F3), JST. S.K. was financially supported by the National Research Foundation (NRF) of Korea grant funded by the Korea Government (2017R1D1B04036381). The collaboration between National Tsing-Hua University and The University of Texas at Austin is facilitated by the Global Networking Talent (NT 3.0) Program, Ministry of Education in Taiwan.
dc.identifier.citationJunho Choi et al. ,Moiré potential impedes interlayer exciton diffusion in van der Waals heterostructures.Sci. Adv.6,eaba8866(2020).DOI:10.1126/sciadv.aba8866
dc.identifier.doiDOI:10.1126/sciadv.aba8866
dc.identifier.urihttps://hdl.handle.net/2152/123511
dc.identifier.urihttps://doi.org/10.26153/tsw/50307
dc.language.isoen_US
dc.publisherAmerican Association for the Advancement of Science
dc.relation.ispartofCenter for Dynamics and Control of Materials Publications
dc.rightsAttribution-NonCommercial 3.0 United Statesen
dc.rights.restrictionOpen
dc.rights.urihttp://creativecommons.org/licenses/by-nc/3.0/us/
dc.subjectMoiré
dc.titleMoiré potential impedes interlayer exciton diffusion in van der Waals heterostructures
dc.typeArticle

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