Nanoscale spectroscopic imaging of polymorphic transition in silk using infrared near-field optics

In this project, thin silk films made patterned with Electron Beam Lithography and Ion Beam Lithography were characterized using various types of nanoscale characterization technologies. It has been found that silk goes through four phases ([beta]-sheet formation, deformation, partial reformation, decomposition/carbonization) under different dosages of electrons. This project provides vital insight of using silk as a resist material for Electron Beam Lithography as well as comparison of many existing technologies that are capable of characterizing material at nanoscale resolution.