Electron mobility in monolayer WS2 encapsulated in hexagonal boron-nitride
| dc.creator | Wang, Yimeng | |
| dc.creator | Sohier, Thibault | |
| dc.creator | Watanabe, Kenji | |
| dc.creator | Taniguchi, T | |
| dc.creator | Verstraete, Matthieu J. | |
| dc.creator | Tutuc, Emanuel | |
| dc.date.accessioned | 2024-01-23T18:01:40Z | |
| dc.date.available | 2024-01-23T18:01:40Z | |
| dc.date.issued | 2021-03-11 | |
| dc.description.abstract | We report electron transport measurements in dual-gated monolayer WS2 encapsulated in hexagonal boron-nitride. Using gated Ohmic con- tacts that operate from room temperature down to 1.5 K, we measure the intrinsic conductivity and carrier density as a function of tempera- ture and gate bias. Intrinsic electron mobilities of 100 cm 2/(V s) at room temperature and 2000 cm2/(V s) at 1.5 K are achieved. The mobility shows a strong temperature dependence at high temperatures, consistent with phonon scattering dominated carrier transport. At low temperature, the mobility saturates due to impurity and long-range Coulomb scattering. First-principles calculations of phonon scattering in monolayer WS2 are in good agreement with the experimental results, showing we approach the intrinsic limit of transport in these two-dimensional layers. | |
| dc.description.department | Center for Dynamics and Control of Materials | |
| dc.description.sponsorship | The work at the University of Texas at Austin was supported by Army Research Office under Grant No. W911NF-17-1-0312, the National Science Foundation under Grants No. DMR-1720595 and EECS-1610008, and the Welch Foundation under Grant No. F-2018-20190330. K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan, Grant No. JPMXP0112101001, JSPS KAKENHI Grant No. JP20H00354, and the CREST (No. JPMJCR15F3), JST. The results of this research have been partially achieved using the DECI resource ARCHER UK National Supercomputing Service with support from the PRACE aisbl. Simulation time was also awarded by PRACE (Project Id: 2020225411) on MareNostrum at Barcelona Supercomputing Center-Centro Nacional de Supercomputacion (The Spanish National Supercomputing Center) and by the Consortium des Equipements de Calcul Intensif (CECI), funded by the Fonds de la Recherche Scientifique de Belgique (FNRS) under Grant No. 2.5020.11 and by the Walloon Region. T.S. acknowledges support from NCCR MARVEL funded by the Swiss National Science Foundation and from the University of Liege under the Special Funds for Research, IPD-STEMA Programme. M.J.V. gratefully acknowledges funding from the Belgian FNRS under PDR Grant No. T.0103.19-ALPS and from the MELODICA project, funded by the EU FLAG-ERA JTC2017 call. | |
| dc.identifier.doi | https://doi.org/10.1063/5.0039766 | |
| dc.identifier.uri | https://hdl.handle.net/2152/123475 | |
| dc.identifier.uri | https://doi.org/10.26153/tsw/50271 | |
| dc.language.iso | en_US | |
| dc.publisher | AIP Publishing | |
| dc.relation.ispartof | Center for Dynamics and Control of Materials Publications | |
| dc.rights.restriction | Open | |
| dc.subject | electron | |
| dc.title | Electron mobility in monolayer WS2 encapsulated in hexagonal boron-nitride | |
| dc.type | Article |