Minority carrier lifetime and photoluminescence of mid-wave infrared InAsSbBi

dc.creatorPetluru, Priyanka
dc.creatorGrant, Perry C.
dc.creatorMuhowski, Aaron J.
dc.creatorObermeier, Isabella M.
dc.creatorMilosavljevic, Marko S.
dc.creatorJohnson, Shane R.
dc.creatorWasserman, Daniel
dc.creatorSteenbergen, Elizabeth H.
dc.creatorWebster, Preston T.
dc.description.abstractTime-resolved photoluminescence measurements are reported for InAsSbBi alloys grown by molecular beam epitaxy with Bi mole fractions ranging from 0 to 0.8%, yielding minority carrier lifetimes on the order of hundreds of nanoseconds. The minority carrier lifetimes extracted from the time-resolved photoluminescence measurements are comparable to those of lattice-matched InAsSb grown at the same respective temperatures. Nomarski imaging shows that smooth, droplet-free surface morphologies are obtained in 1 μm thick InAsSbBi epilayers grown at temperatures between 360 and 380 °C. The alloy composition-dependent bandgap energies for the InAsSbBi samples are determined from temperature-dependent steady-state photoluminescence measurements and compared with the tetragonal distortion measured by x-ray diffraction to determine the Sb and Bi mole fractions of each sample. The minority carrier lifetime and the achievable extension of the InAsSb(Bi) cut-off wavelength are analyzed as functions of alloy composition and compared with the performance of InAsSb layers with similar growth parameters.
dc.description.departmentCenter for Dynamics and Control of Materials
dc.description.sponsorshipThe authors acknowledge financial support through the research sponsored by the Air Force Research Laboratory under Agreement No. FA9453-19-2-0004 and support from the Air Force Research Laboratory Space Vehicles Directorate and University Space Research Association. This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE), Office of Science by the Los Alamos National Laboratory (Contract No. 89233218CNA000001) and Sandia National Laboratories (Contract No. DE-NA-0003525). In addition, we acknowledge support from an NSF MRSEC (No. DMR-1720595) and the use of facilities within the Eyring Materials Center at Arizona State University supported in part by No. NNCI-ECCS-1542160. Approved for public release: distribution is unlimited. AFMC PA No. 2020-0157; 25 March 2020.
dc.identifier.citationPriyanka Petluru, Perry C. Grant, Aaron J. Muhowski, Isabella M. Obermeier, Marko S. Milosavljevic, Shane R. Johnson, Daniel Wasserman, Elizabeth H. Steenbergen, Preston T. Webster; Minority carrier lifetime and photoluminescence of mid-wave infrared InAsSbBi. Appl. Phys. Lett. 10 August 2020; 117 (6): 061103. https://doi.org/10.1063/5.0007275
dc.relation.ispartofCenter for Dynamics and Control of Materials Publications
dc.titleMinority carrier lifetime and photoluminescence of mid-wave infrared InAsSbBi

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