Minority carrier lifetime and photoluminescence of mid-wave infrared InAsSbBi

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Petluru, Priyanka
Grant, Perry C.
Muhowski, Aaron J.
Obermeier, Isabella M.
Milosavljevic, Marko S.
Johnson, Shane R.
Wasserman, Daniel
Steenbergen, Elizabeth H.
Webster, Preston T.

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Time-resolved photoluminescence measurements are reported for InAsSbBi alloys grown by molecular beam epitaxy with Bi mole fractions ranging from 0 to 0.8%, yielding minority carrier lifetimes on the order of hundreds of nanoseconds. The minority carrier lifetimes extracted from the time-resolved photoluminescence measurements are comparable to those of lattice-matched InAsSb grown at the same respective temperatures. Nomarski imaging shows that smooth, droplet-free surface morphologies are obtained in 1 μm thick InAsSbBi epilayers grown at temperatures between 360 and 380 °C. The alloy composition-dependent bandgap energies for the InAsSbBi samples are determined from temperature-dependent steady-state photoluminescence measurements and compared with the tetragonal distortion measured by x-ray diffraction to determine the Sb and Bi mole fractions of each sample. The minority carrier lifetime and the achievable extension of the InAsSb(Bi) cut-off wavelength are analyzed as functions of alloy composition and compared with the performance of InAsSb layers with similar growth parameters.


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Priyanka Petluru, Perry C. Grant, Aaron J. Muhowski, Isabella M. Obermeier, Marko S. Milosavljevic, Shane R. Johnson, Daniel Wasserman, Elizabeth H. Steenbergen, Preston T. Webster; Minority carrier lifetime and photoluminescence of mid-wave infrared InAsSbBi. Appl. Phys. Lett. 10 August 2020; 117 (6): 061103. https://doi.org/10.1063/5.0007275