Elucidating Piezoelectricity and Strain in Monolayer MoS2 at the Nanoscale Using Kelvin Probe Force Microscopy

dc.contributorYu, Edward
dc.creatorDe Palma, Alex
dc.creatorPeng, Xinyu
dc.creatorArash, Saba
dc.creatorGao, Frank
dc.creatorBaldini, Edoardo
dc.creatorLi, Xiaoqin
dc.creatorYu, Edward
dc.date.accessioned2024-05-06T22:28:14Z
dc.date.available2024-05-06T22:28:14Z
dc.date.issued2024-02-05
dc.description.abstractStrain engineering modifies the optical and electronic properties of atomically thin transition metal dichalcogenides. Highly inhomogeneous strain distributions in twodimensional materials can be easily realized, enabling control of properties on the nanoscale; however, methods for probing strain on the nanoscale remain challenging. In this work, we characterize inhomogeneously strained monolayer MoS2 via Kelvin probe force microscopy and electrostatic gating, isolating the contributions of strain from other electrostatic effects and enabling the measurement of all components of the two-dimensional strain tensor on length scales less than 100 nm. The combination of these methods is used to calculate the spatial distribution of the electrostatic potential resulting from piezoelectricity, presenting a powerful way to characterize inhomogeneous strain and piezoelectricity that can be extended toward a variety of 2D materials.
dc.description.departmentCenter for Dynamics and Control of Materials
dc.description.sponsorshipThis research was primarily supported by the National Science Foundation through the Center for Dynamics and Control of Materials: an NSF MRSEC under Cooperative Agreement Nos. DMR-1720595 and DMR-2308817. This work was performed in part at the University of Texas Microelectronics Research Center, a member of the National Nanotechnology Coordinated Infrastructure (NNCI), which is supported by the National Science Foundation (Grant ECCS-2025227), and using the facilities and instrumentation supported by the National Science Foundation through the Center for Dynamics and Control of Materials: an NSF MRSEC under Cooperative Agreement Nos. DMR-1720595 and DMR-2308817 and NSF Major Research Instrumentation (MRI) program DMR- 2019130. E.B. acknowledges support from the National Science Foundation under grant DMR-2308817 (X.P.) and the Robert A. Welch Foundation under grant F-2092- 20220331 (F.Y.G.).
dc.identifier.citationDe Palma, AC; Peng, XY; Arash, S; Gao, FY; Baldini, E; Li, XQ; Yu, ET. Elucidating Piezoelectricity and Strain in Monolayer MoS2 at the Nanoscale Using Kelvin Probe Force Microscopy. Nano Lett. 2024, 24(6), 1835-1842. DOI: 10.1021/acs.nanolett.3c03100 .
dc.identifier.doiDOI: 10.1021/acs.nanolett.3c03100
dc.identifier.urihttps://hdl.handle.net/2152/125019
dc.identifier.urihttps://doi.org/10.26153/tsw/51611
dc.relation.ispartofUT Faculty/Researcher Worksen
dc.rights.restrictionOpen
dc.subject2D materials, transition metal dichalcogenides, strain, piezoelectricity, Kelvin probe force microscopy
dc.titleElucidating Piezoelectricity and Strain in Monolayer MoS2 at the Nanoscale Using Kelvin Probe Force Microscopy
dc.typeJournalArticle

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