Particle Generation During Photoresist Dissolution

dc.contributor.utaustinauthorChauhan, Siddharthen
dc.contributor.utaustinauthorBonnecaze, Roger T.en
dc.contributor.utaustinauthorWillson, C. Granten
dc.creatorChauhan, S.en
dc.creatorSomervell, M.en
dc.creatorCarcasi, M.en
dc.creatorScheer, S.en
dc.creatorBonnecaze, R. T.en
dc.creatorMack, C.en
dc.creatorWillson, C. G.en
dc.date.accessioned2015-04-16T14:48:31Zen
dc.date.available2015-04-16T14:48:31Zen
dc.date.issued2010en
dc.description.abstractA lattice-type Monte Carlo based mesoscale model and simulation of the lithography process has been described previously [1]. The model includes the spin coating, post apply bake, exposure, post exposure bake and development steps. This simulation has been adapted to study the insoluble particle generation that arises from statistically improbable events. These events occur when there is a connected pathway of soluble material that envelops a volume of insoluble material due to fluctuations in the deprotection profile that occur during the post exposure bake [2]. Development erodes the insoluble material into the developer stream as an insoluble particle. This process may produce a cavity on the line edge that can be far larger than a single polymer molecule. The insoluble particles generated may coalesce in developer to form large aggregates of insoluble material that ultimately deposit on the wafer surface and the tooling. The recent modifications made in mesoscale models for the PEB and dissolution steps, which have enabled this study are briefly described. An algorithm that was used for particle detection in the current study is also discussed. The effect of the resist formulation and the different lithographic steps, namely, exposure, post exposure bake and development, on the extent of particle generation is analyzed. These simulations can be used to set process variables to minimize the extent of particle generation.en
dc.description.departmentChemical Engineeringen
dc.identifier.citationSiddharth Chauhan, Mark Somervell, Michael Carcasi, Steven Scheer, Roger T. Bonnecaze, Chris Mack, C. Grant Willson. Advances in Resist Materials and Processing Technology XXVII, 763933 (Mar., 2010). doi:10.1117/12.848424en
dc.identifier.doi10.1117/12.848424en
dc.identifier.issn0277-786Xen
dc.identifier.issn978-0-8194-8053-8en
dc.identifier.urihttp://hdl.handle.net/2152/29515en
dc.language.isoEnglishen
dc.relation.ispartofserialAdvances in Resist Materials and Processing Technology Xxvii, Pts 1 and 2en_US
dc.rightsAdministrative deposit of works to UT Digital Repository: This works author(s) is or was a University faculty member, student or staff member; this article is already available through open access or the publisher allows a PDF version of the article to be freely posted online. The library makes the deposit as a matter of fair use (for scholarly, educational, and research purposes), and to preserve the work and further secure public access to the works of the University.en
dc.subjectmesoscale modelingen
dc.subjectparticle generationen
dc.subjectmechanismen
dc.subjectmaterials science, multidisciplinaryen
dc.subjectopticsen
dc.subjectphysics, applieden
dc.subjectpolymeren
dc.subjectscienceen
dc.titleParticle Generation During Photoresist Dissolutionen
dc.typeArticleen

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