Quantum corrected full-band semiclassical Monte Carlo simulation research of charge transport in Si, stressed-Si, and SiGe MOSFETs

dc.contributor.advisorBanerjee, Sanjayen
dc.contributor.advisorRegister, Leonard F.en
dc.creatorFan, Xiaofeng, 1978-en
dc.date.accessioned2008-08-28T23:48:33Zen
dc.date.available2008-08-28T23:48:33Zen
dc.date.issued2006en
dc.description.abstractThis Ph.D. research is centered around a full-band Monte Carlo device simulator (“Monte Carlo at the University of Texas”, MCUT) with quantum corrections (based on one-dimensional Schrödinger equation solver). The code itself was based on a solid infrastructure of a Monte Carlo simulator, “MoCa” from the University of Illinois at Urbana-Champaign. To that there were added new methods and features during my Ph.D. program, including strained band structures, alternative (to conventional 100 ) surface orientations, full-band scattering mechanisms, and valley-dependent quantum correction. These features enable “MCUT” to be used to model various strained and/or alloyed silicon MOSFETs, as well as the MOSFETs composed of alternative materials such as Ge, in sub-100 nm regime. Monte Carlo simulation, itself, handles short channel effects and hot carriers in ultra small device well; full-band structure replaces the inaccurate and unknown (for new/strained materials) analytical formulae; and the quantum corrections approximate quantum-confinement effects on device performance. The goal is to understand and predict the device behavior of the so called “non-classical” CMOS ― beyond bulk Si based CMOS ― in the sub-100 nm regime.
dc.description.departmentElectrical and Computer Engineeringen
dc.format.mediumelectronicen
dc.identifier.oclc182545666en
dc.identifier.urihttp://hdl.handle.net/2152/3451en
dc.language.isoengen
dc.rightsCopyright © is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en
dc.subject.lcshMetal oxide semiconductor field-effect transistors--Computer simulationen
dc.subject.lcshMetal oxide semiconductors, Complementary--Computer simulationen
dc.subject.lcshMonte Carlo method--Computer programsen
dc.subject.lcshTransport theoryen
dc.subject.lcshSilicon--Industrial applicationsen
dc.titleQuantum corrected full-band semiclassical Monte Carlo simulation research of charge transport in Si, stressed-Si, and SiGe MOSFETsen
dc.type.genreThesisen
thesis.degree.departmentElectrical and Computer Engineeringen
thesis.degree.disciplineElectrical and Computer Engineeringen
thesis.degree.grantorThe University of Texas at Austinen
thesis.degree.levelDoctoralen
thesis.degree.nameDoctor of Philosophyen

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