Method for forming hot-carrier suppressed sub-micron MISFET device

dc.contributor.assigneeBoard of Regents, Univ. of Tex. Sys.
dc.creatorTasch, Aloysious F. Jr.
dc.creatorShin, Hyung-soon
dc.creatorMaziar, Christine M.
dc.date.accessioned2019-05-14T14:34:25Z
dc.date.available2019-05-14T14:34:25Z
dc.date.filed1992-03-03
dc.date.issued1992-03-03
dc.description.abstractHot-carrier suppression in a sub-micron MISFET structure is achieved by providing a drain region which includes a steeply profiled N+ (or P+) doped region in the surface of a semiconductor body with a first epitaxial layer formed thereover having N- (or P-) dopant concentration. A second N+ (or P+) epitaxial layer is formed over the first epitaxial layer and functions as a low ohmic contact to the drain region. In a preferred embodiment both the source and drain regions have dopant concentrations provided by N+ (or P+) doped regions in the surface of a substrate with epitaxial layers thereover. The dopant profile reduces the voltage drop across the more highly doped region of the drain and thereby reduces the electric field therein. Further, the reduction in dopant concentration reduces the electric field due to energy band bending associate with the change in doping level from the N+ (P+) region to the N- (P-) epitaxial layer. The resulting sub-micron device has better long-term reliability. The epitaxial layers are adjacent to and spaced from the gate contact by a dielectric layer such as silicon oxide. In a preferred embodiment, the dielectric layer is thicker between the second epitaxial layer and the gate contact than between the first epitaxial layer and the gate contact.
dc.description.departmentBoard of Regents, University of Texas System
dc.identifier.applicationnumber7655674
dc.identifier.patentnumber5093275
dc.identifier.urihttps://hdl.handle.net/2152/74654
dc.identifier.urihttp://dx.doi.org/10.26153/tsw/1772
dc.publisherUnited States Patent and Trademark Office
dc.relation.ispartofUniversity of Texas Patents
dc.rights.restrictionOpen
dc.subject.cpcH01L29/0847
dc.subject.cpcH01L29/66628
dc.subject.cpcH01L29/7834
dc.subject.cpcH01L29/7836
dc.subject.cpcY10S148/082
dc.subject.uspc148/DIG82
dc.subject.uspc257/E21.430
dc.subject.uspc257/E29.040
dc.subject.uspc257/E29.267
dc.subject.uspc257/E29.269
dc.subject.uspc438/300
dc.subject.uspc438/282
dc.subject.uspc438/303
dc.titleMethod for forming hot-carrier suppressed sub-micron MISFET device
dc.typePatent

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