Semiconductor device apparatus having multiple current-voltage curves and zero-bias memory

Access full-text files

Date

1995-04-18

Authors

Dean P. Neikirk
Kiran Kumar Gullapalli

Journal Title

Journal ISSN

Volume Title

Publisher

United States Patent and Trademark Office

Abstract

Heterostructure barrier quantum well device with a super-lattice structure of alternating lightly doped and heavily doped spacer layers having multiple, stable current-voltage curves extending continuously through zero bias at ambient temperature. The device can be repetitively switched between the multiple current-voltage curves. Once placed on a particular curve, the device retains memory of the curve it has been set on, even if held at zero bias for extended periods of time. The device can be switched between current-voltage curve settings at higher positive or negative voltages and can be read at lower voltages. Switching between current-voltage curve settings can also be effected by additional terminal connection(s) to the spacer layer(s).

Description

Keywords

LCSH Subject Headings

Citation