Fluorinated Polymethacrylates as Highly Sensitive Non-chemically Amplified E-beam Resists

Simple item page
dc.contributor.utaustinauthorStrahan, Jeff R.en
dc.contributor.utaustinauthorAdams, Jacob R.en
dc.contributor.utaustinauthorJen, Wei-Lunen
dc.contributor.utaustinauthorNeikirk, Colin C.en
dc.contributor.utaustinauthorRochelle, Timothyen
dc.contributor.utaustinauthorWillson, C. Granten
dc.creatorStrahan, Jeff R.en
dc.creatorAdams, Jacob R.en
dc.creatorJen, Wei-Lunen
dc.creatorVanleenhove, Anjaen
dc.creatorNeikirk, Colin C.en
dc.creatorRochelle, Timothyen
dc.creatorGronheid, Roelen
dc.creatorWillson, C. Granten
dc.date.accessioned2015-04-16T14:47:41Zen
dc.date.available2015-04-16T14:47:41Zen
dc.date.issued2009-04en
dc.description.abstractIn an effort to improve upon the sensitivity of commercial non-chemically amplified e-beam resists, four polyacrylates functionalized with alpha-CF3 and/or CH2CF3 alkoxy substituents were studied. The alpha-CF3 substituent is known to increase backbone-scission efficiency while simultaneously eliminating acidic out-gassing and cross-linking known to occur in alpha-halogen substituted polyacrylates. Contrast curves for the polymeric alpha-CF3 acrylates, generated through e-beam exposure, showed the resists required an order of magnitude less dose than the current industry-standards, PMMA and ZEP. The fundamental sensitivity of these materials to backbone scissioning was determined via Co-60 gamma-ray irradiation. The chain scissioning, G(s), and cross-linking, G(x), values calculated from the resulting change in molecular weight demonstrated that all fluorinated resists possess higher G(s) values than either PMMA or ZEP and have no detectable G(x) values. Utilizing e-beam and EUV interference lithographies, the photospeed of PMTFMA was found to be 2.8x and 4.0x faster, respectively, than PMMA.en
dc.description.departmentChemistryen
dc.identifier.citationJeff R. Strahan, Jacob R. Adams, Wei-Lun Jen, Anja Vanleenhove, Colin C. Neikirk, Timothy Rochelle, Roel Gronheid, C. Grant Willson. Advances in Resist Materials and Processing Technology XXVI, 72733G (Apr., 2009); doi: 10.1117/12.813736en
dc.identifier.doi10.1117/12.813736en
dc.identifier.issn0277-786Xen
dc.identifier.urihttp://hdl.handle.net/2152/29418en
dc.language.isoEnglishen
dc.relation.ispartofserialSociety of Photo-Optical Instrumentation Engineersen_US
dc.rightsAdministrative deposit of works to UT Digital Repository: This works author(s) is or was a University faculty member, student or staff member; this article is already available through open access or the publisher allows a PDF version of the article to be freely posted online. The library makes the deposit as a matter of fair use (for scholarly, educational, and research purposes), and to preserve the work and further secure public access to the works of the University.en
dc.subjecte-beamen
dc.subjectPMMAen
dc.subjectZEPen
dc.subjectG(s)en
dc.subjectG(x)en
dc.subjectEUVen
dc.subjectTransfer radical polymerizationen
dc.subjectSize-exclusion chromotographyen
dc.subjectAnionic-polymerizationen
dc.subjectMethyl-methacrylateen
dc.subjectEthylen
dc.subject2-Trifluoromethylacrylateen
dc.subjectRadiation degradationen
dc.subjectElectron beamen
dc.subjectMaterials Science, Multidisciplinaryen
dc.subjectOpticsen
dc.subjectPhysics, Multidisciplinaryen
dc.titleFluorinated Polymethacrylates as Highly Sensitive Non-chemically Amplified E-beam Resistsen
dc.typeArticleen

Access full-text files

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
FluorinatedPoymethacrylates.pdf
Size:
287.13 KB
Format:
Adobe Portable Document Format
Download

Collections

UT Faculty/Researcher Works