SiGe channel MOSFETs with high-K and metal gate : novel GAA bridge PMOSFETs and planar short channel PMOSFETs
As standard silicon CMOS device shrinks to the deep submicron regime, it has become harder and harder to meet the requirement of International Technology Roadmap for Semiconductors (ITRS) high performance integrated circuit devices. Because of this, structural approaches such as multi-gate MOSFETs (e.g. FinFET, Tri-gate FET, bridge FET) or material approaches using high mobility materials like SiGe/Ge or III-IV instead of silicon have been researched and have become more and more popular in the literature these days. This work presents novel SiGe bridge device fabrication by applying both approaches to maximize the benefits and planar SiGe channel PMOSFET characteristics.