Defect-modulated thermal transport behavior of BAs under high pressure

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dc.creatorZhou, Yongjian
dc.creatorHsieh, Wen-Pin
dc.creatorChen, Chao-Chih
dc.creatorMeng, Xianghai
dc.creatorTian, Fei
dc.creatorRen, Zhifeng
dc.creatorShi, Li
dc.creatorLin, Jung-Fu
dc.creatorWang, Yagao
dc.date.accessioned2024-02-13T14:59:16Z
dc.date.available2024-02-13T14:59:16Z
dc.date.issued2022-09-19
dc.description.abstractBoron arsenide (BAs) is a covalent semiconductor with a theoretical intrinsic thermal conductivity approaching 1300 W/m K. The existence of defects not only limits the thermal conductivity of BAs significantly but also changes its pressure-dependent thermal transport behavior. Using both picosecond transient thermoreflectance and femtosecond time-domain thermoreflectance techniques, we observed a non-monotonic dependence of thermal conductivity on pressure. This trend is not caused by the pressure-modulated phonon–phonon scattering, which was predicted to only change the thermal conductivity by 10%–20%, but a result of several competing effects, including defect–phonon scattering and modification of structural defects under high pressure. Our findings reveal the complexity of the defect-modulated thermal behavior under pressure.
dc.description.departmentCenter for Dynamics and Control of Materials
dc.description.sponsorshipThe authors are grateful for the support from the National Science Foundation (NASCENT, Grant No. EEC-1160494; Center for Dynamics and Control of Materials DMR-1720595; CBET- 2211660); F.T., Z.R., and L.S. were supported by the Office of Naval Research under Multidisciplinary University Research Initiative (Grant No. N00014-16-1-2436).
dc.identifier.citationZhou, YJ; Hsieh, WP; Chen, CC; Meng, XH; Tian, F; Ren, ZF; Shi, L; Lin, JF; Wang, YG. Defect-modulated thermal transport behavior of BAs under high pressure. Appl. Phys. Lett. 2022, 121(12), 121902-. DOI: 10.1063/5.0113007 .
dc.identifier.doiDOI: 10.1063/5.0113007
dc.identifier.urihttps://hdl.handle.net/2152/123664
dc.identifier.urihttps://doi.org/10.26153/tsw/50458
dc.language.isoen_US
dc.publisherAIP Publishing
dc.relation.ispartofCenter for Dynamics and Control of Materials Publications
dc.rights.restrictionOpen
dc.subjectBoron arsenide (BAs)
dc.titleDefect-modulated thermal transport behavior of BAs under high pressure
dc.typeArticle

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