Defect-modulated thermal transport behavior of BAs under high pressure

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Zhou, Yongjian
Hsieh, Wen-Pin
Chen, Chao-Chih
Meng, Xianghai
Tian, Fei
Ren, Zhifeng
Shi, Li
Lin, Jung-Fu
Wang, Yagao

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AIP Publishing


Boron arsenide (BAs) is a covalent semiconductor with a theoretical intrinsic thermal conductivity approaching 1300 W/m K. The existence of defects not only limits the thermal conductivity of BAs significantly but also changes its pressure-dependent thermal transport behavior. Using both picosecond transient thermoreflectance and femtosecond time-domain thermoreflectance techniques, we observed a non-monotonic dependence of thermal conductivity on pressure. This trend is not caused by the pressure-modulated phonon–phonon scattering, which was predicted to only change the thermal conductivity by 10%–20%, but a result of several competing effects, including defect–phonon scattering and modification of structural defects under high pressure. Our findings reveal the complexity of the defect-modulated thermal behavior under pressure.


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Zhou, YJ; Hsieh, WP; Chen, CC; Meng, XH; Tian, F; Ren, ZF; Shi, L; Lin, JF; Wang, YG. Defect-modulated thermal transport behavior of BAs under high pressure. Appl. Phys. Lett. 2022, 121(12), 121902-. DOI: 10.1063/5.0113007 .